Below is a schematic showing the cross-section of a Si n+ p junction solar cell. The area of the solar cell is 3 cm2 . Then n+ -type region is doped with a donor concentration ND = 2×1019 cm-3 and the p-type region is doped with an acceptor concentration NA = 1017 cm-3 . The intrinsic carrier concentration ni of Si at T = 300 K is 1.5x1010 cm-3 and the dielectric constant εr of Si is 12. In the conditions illustrated below, under AM1.5G illumination, the ammeter reads a current flow of 135 mA and the voltmeter reads a voltage of 0.62 V, respectively. a) Estimate the maximum power output. b) Calculate the fill factor and power conversion efficiency of this solar cell. c) Assume a photovoltaic system consisting of such solar cell is installed in the rooftop of a house with an overall device active area of 30 m2 . The solar irradiation on the rooftop for each day is equivalent to 4 hours of AM1.5G illumination. Please estimate the total electricity generated annually (in kWh). x
Below is a schematic showing the cross-section of a Si n+ p junction solar cell. The area of the solar cell is 3 cm2 . Then n+ -type region is doped with a donor concentration ND = 2×1019 cm-3 and the p-type region is doped with an acceptor concentration NA = 1017 cm-3 . The intrinsic carrier concentration ni of Si at T = 300 K is 1.5x1010 cm-3 and the dielectric constant εr of Si is 12. In the conditions illustrated below, under AM1.5G illumination, the ammeter reads a current flow of 135 mA and the voltmeter reads a voltage of 0.62 V, respectively.
a) Estimate the maximum power output.
b) Calculate the fill factor and power conversion efficiency of this solar cell.
c) Assume a photovoltaic system consisting of such solar cell is installed in the rooftop of a house with an overall device active area of 30 m2 . The solar irradiation on the rooftop for each day is equivalent to 4 hours of AM1.5G illumination. Please estimate the total electricity generated annually (in kWh). x
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