A Silicon diode is operating at a room temperature of 25 °C and has a reverse current of10 nA.Solve for the following:a. the diode current at room temperatureb. the reverse current when the temperature increased to 50 °CPropertiesAtomic NumberAtomic WeightDensity (g/cm³)Relative Permittivity (Dielectric Constant)Atoms/cm³Energy Gap, Ego at OK (eV)Energy Gap, Eg at 300K (eV)Resistivity at 300K (ohm-cm)Electron Mobility, μ at 300K (cm²/V-s)Hole Mobility, μp at 300K (cm²/V-s)Intrinsic Concentration, n; at 300K (cm³)Electron Diffusion Constant, D₁ at 300K (cm²/s)Hole Diffusion Constant, D, at 300K (cm³/s)Melting Point (°C)Silicon1428.12.8311.95 x 10^221.211.122.3 x 10^515004751.45 x 10^1034131415Germanium3272.65.32164.4 x 10^220.7850.7245380018002.5 x 10^139947937

The current through a silicon diode can be described by the Shockley diode equation: I = I0 *…

A Silicon diode is operating at a room temperature of 25 °C and has a reverse current of 10 nA. Solve for the following: a. the diode current at room temperature b. the reverse current when the temperature increased to 50 °C

A Silicon diode is operating at a room temperature of 25 °C and has a reverse current of 10 nA. Solve for the following: a. the diode current at room temperature b. the reverse current when the temperature increased to 50 °C

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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