A Silicon diode is operating at a room temperature of 25 °C and has a reverse current of 10 nA. Solve for the following: a. the diode current at room temperature b. the reverse current when the temperature increased to 50 °C

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A Silicon diode is operating at a room temperature of 25 °C and has a reverse current of
10 nA.
Solve for the following:
a. the diode current at room temperature
b. the reverse current when the temperature increased to 50 °C
Properties
Atomic Number
Atomic Weight
Density (g/cm³)
Relative Permittivity (Dielectric Constant)
Atoms/cm³
Energy Gap, Ego at OK (eV)
Energy Gap, Eg at 300K (eV)
Resistivity at 300K (ohm-cm)
Electron Mobility, μ at 300K (cm²/V-s)
Hole Mobility, μp at 300K (cm²/V-s)
Intrinsic Concentration, n; at 300K (cm³)
Electron Diffusion Constant, D₁ at 300K (cm²/s)
Hole Diffusion Constant, D, at 300K (cm³/s)
Melting Point (°C)
Silicon
14
28.1
2.83
11.9
5 x 10^22
1.21
1.12
2.3 x 10^5
1500
475
1.45 x 10^10
34
13
1415
Germanium
32
72.6
5.32
16
4.4 x 10^22
0.785
0.72
45
3800
1800
2.5 x 10^13
99
47
937
Transcribed Image Text:A Silicon diode is operating at a room temperature of 25 °C and has a reverse current of 10 nA. Solve for the following: a. the diode current at room temperature b. the reverse current when the temperature increased to 50 °C Properties Atomic Number Atomic Weight Density (g/cm³) Relative Permittivity (Dielectric Constant) Atoms/cm³ Energy Gap, Ego at OK (eV) Energy Gap, Eg at 300K (eV) Resistivity at 300K (ohm-cm) Electron Mobility, μ at 300K (cm²/V-s) Hole Mobility, μp at 300K (cm²/V-s) Intrinsic Concentration, n; at 300K (cm³) Electron Diffusion Constant, D₁ at 300K (cm²/s) Hole Diffusion Constant, D, at 300K (cm³/s) Melting Point (°C) Silicon 14 28.1 2.83 11.9 5 x 10^22 1.21 1.12 2.3 x 10^5 1500 475 1.45 x 10^10 34 13 1415 Germanium 32 72.6 5.32 16 4.4 x 10^22 0.785 0.72 45 3800 1800 2.5 x 10^13 99 47 937
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