A chunk of n-type silicon with a of 0.002 cm2 cross-sectional area and 10-3 cm length is connected at its ends to a 10-V battery. At T 300 K for a current of 150 mA in the silicon find • the required resistance R the required conductivity the density of donor atoms to be added to achieve this conductivity the concentration of acceptor atoms to be added to form a eempensated p- type material with same conductivity found above if the initial concentrationof deneratoms is-Nd-1E15-cm 3.

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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A chunk of n-type silicon with a of 0.002 cm2 cross-sectional area and 10-3 cm
length is connected at its ends to a 10-V battery. At T 300 K
for a current of 150 mA in the silicon find
• the required resistance R
the required conductivity
the density of donor atoms to be added to achieve this conductivity
the concentration of acceptor atoms to be added to form a eempensated p-
type material with same conductivity found above if the initial concentrationof
deneratoms is-Nd-1E15-cm 3.
Transcribed Image Text:A chunk of n-type silicon with a of 0.002 cm2 cross-sectional area and 10-3 cm length is connected at its ends to a 10-V battery. At T 300 K for a current of 150 mA in the silicon find • the required resistance R the required conductivity the density of donor atoms to be added to achieve this conductivity the concentration of acceptor atoms to be added to form a eempensated p- type material with same conductivity found above if the initial concentrationof deneratoms is-Nd-1E15-cm 3.
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