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(b) Figure Q1(b) shows a parallel diode configuration circuit. Both diodes are silicon type diode and the values of R₁, R₂ and Rare 2.5 k 4.7 k and 8.5 kn, respectively. Determine: i) the current flow in each resistor R₁, R₂ and R3 ii) the power dissipated by each resistor R₁, R₂ and R3 iii) the output voltage, V. +15Vo Di D₂ 2K5 4K7 R₂ Figure Q1(b) 5X8 3 -10V

(b) Figure Q1(b) shows a parallel diode configuration circuit. Both diodes are silicon type diode and the values of R₁, R₂ and Rare 2.5 k 4.7 k and 8.5 kn, respectively. Determine: i) the current flow in each resistor R₁, R₂ and R3 ii) the power dissipated by each resistor R₁, R₂ and R3 iii) the output voltage, V. +15Vo Di D₂ 2K5 4K7 R₂ Figure Q1(b) 5X8 3 -10V

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Iv. (;) (Б) Gini ) D₁ 2 D2 · R₁ ² R2: 2 Voz Ri R₁ R₂ 15 a'ske 15 4-7ка 15+10 Power Dessipate PL R2 -10 V 8iske Г RBPL 2 2 6 x103 6 та 2 Vo 2 3-191×16-3 3. 19ima 25 вска Riz 2-ske R₂ = -3 [2-94х1 зу2 0-от34 watt 15- 10 - 5 V. (ання ) 4-тка R38.5k-2 e 2.94x10-3 - 2.94 та. 3 јдео [6х10-3] x 2.5x10 = 0·095 watt IZeer (3-191х10-3)2 х 4-7 х10 3 2 оочу swatt × 8:5х10 3
Transcribed Image Text:Iv. (;) (Б) Gini ) D₁ 2 D2 · R₁ ² R2: 2 Voz Ri R₁ R₂ 15 a'ske 15 4-7ка 15+10 Power Dessipate PL R2 -10 V 8iske Г RBPL 2 2 6 x103 6 та 2 Vo 2 3-191×16-3 3. 19ima 25 вска Riz 2-ske R₂ = -3 [2-94х1 зу2 0-от34 watt 15- 10 - 5 V. (ання ) 4-тка R38.5k-2 e 2.94x10-3 - 2.94 та. 3 јдео [6х10-3] x 2.5x10 = 0·095 watt IZeer (3-191х10-3)2 х 4-7 х10 3 2 оочу swatt × 8:5х10 3
(b) Figure Q1(b) shows a parallel diode configuration circuit. Both diodes are silicon type diode and the values of R₁, R₂ and Rare 2.5 k2, 4.7 kand 8.5 kn, respectively. Determine: i) the current flow in each resistor R₁, R₂ and R3 ii) the power dissipated by each resistor R₁, R₂ and R3 iii) the output voltage, V. +15Vo Di D₂ R₁ 2K5 4K7 R₂ Figure Q1(b) 5x8 -10V Vo
Transcribed Image Text:(b) Figure Q1(b) shows a parallel diode configuration circuit. Both diodes are silicon type diode and the values of R₁, R₂ and Rare 2.5 k2, 4.7 kand 8.5 kn, respectively. Determine: i) the current flow in each resistor R₁, R₂ and R3 ii) the power dissipated by each resistor R₁, R₂ and R3 iii) the output voltage, V. +15Vo Di D₂ R₁ 2K5 4K7 R₂ Figure Q1(b) 5x8 -10V Vo
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