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e donor conentration and the electron mobility.

e donor conentration and the electron mobility.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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(a) Consider compensated n-type silicon at T = 300 K, with a conductivity of o = 16 (N. cm)-1 and an acceptor doping concentration of 1017 cm3. Determine the donor conentration and the electron mobility." (b) Assumc that in an n-type gallium arsenide semiconductor at T = 300 K, the electron concentration varies linearly from 1× 1018 to 7 x 1017 cm-3 over a distance of 0.10 cm. Calculate the diffusion current density if the electron diffusion coefficient is Da= 225 cm?/s. (c) For a MOSFET with Vr=1 V and Z=50 um, L=2 µm, (assume an electron channel mobility H=200 cm?/Vs, SiO2 thickness = 1 um and the substrate is connected to the source) calculate followings. (a) the drain current at VG =5 V, VD= 0.1 V, (b) the drain current at VG=3 V, VD=5 V, (c) linear kn, (d) saturation ky
Transcribed Image Text:(a) Consider compensated n-type silicon at T = 300 K, with a conductivity of o = 16 (N. cm)-1 and an acceptor doping concentration of 1017 cm3. Determine the donor conentration and the electron mobility." (b) Assumc that in an n-type gallium arsenide semiconductor at T = 300 K, the electron concentration varies linearly from 1× 1018 to 7 x 1017 cm-3 over a distance of 0.10 cm. Calculate the diffusion current density if the electron diffusion coefficient is Da= 225 cm?/s. (c) For a MOSFET with Vr=1 V and Z=50 um, L=2 µm, (assume an electron channel mobility H=200 cm?/Vs, SiO2 thickness = 1 um and the substrate is connected to the source) calculate followings. (a) the drain current at VG =5 V, VD= 0.1 V, (b) the drain current at VG=3 V, VD=5 V, (c) linear kn, (d) saturation ky
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