5x10 cm and Na The doping concentrations of p-n junction are N. 1.5x10 cm, and the minority carrier lifetimes are to = 2 x 10" s and to = 8x 10*s. The electron mobility is 965 em'/V-s and the holes mobility is 386 cm/V-s and The cross sectional arca is A 5x 104 cm. Calculate (a) the ideal reverse-saturation current due to holes, (b) the ideal reverse-saturation current due to clectrons, (c) the hole concentration at x x, for Va = 0.8 Vbi (built-in voltage), (d) the electron current at x = X, for V, 0.8 Vbi-, electron current at x = x, + (1/2) L, (diffusion length) for Va 0.8 Vbi- and (e) the

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The doping concentrations of p-n junction are N, = 5x101 cm and Na
1.5x10 cm, and the minority carrier lifetimes are to = 2 x 10" s and Tno = 8x
10*s. The electron mobility is 965 cm²/V-s and the holes mobility is 386
cm?/V-s and The cross sectional arca is A = 5x 10* cm. Calculate (a) the
ideal reverse-saturation current due to holes, (b) the ideal reverse-saturation
current due to clectrons, (c) the hole concentration at x = x, for Va = 0.8 Vbi
(built-in voltage), (d) the electron current at x = x, for V, = 0.8 Vbi-, and (e) the
electron current at x = x, + (1/2) L, (diffusion length) for Va = 0.8 Vbi-
Transcribed Image Text:The doping concentrations of p-n junction are N, = 5x101 cm and Na 1.5x10 cm, and the minority carrier lifetimes are to = 2 x 10" s and Tno = 8x 10*s. The electron mobility is 965 cm²/V-s and the holes mobility is 386 cm?/V-s and The cross sectional arca is A = 5x 10* cm. Calculate (a) the ideal reverse-saturation current due to holes, (b) the ideal reverse-saturation current due to clectrons, (c) the hole concentration at x = x, for Va = 0.8 Vbi (built-in voltage), (d) the electron current at x = x, for V, = 0.8 Vbi-, and (e) the electron current at x = x, + (1/2) L, (diffusion length) for Va = 0.8 Vbi-
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