12. Use this information to answer Question 12-16:A silicon pn junction (step junction) has doping densities of N₁ = 1 x 100 cm3 on the p-side and N₁ = 2 x10¹6 cm3 on the n-side. Carrier lifetimes are given as T₁ = 10-s and T₂ = 10 s. Assume long diode, i.e. longquasi-neutral regions.Calculate the built-in voltage in unit of V.Answers within 5% error will be considered correct.Enter answer here13. Suppose now that a forward bias of 0.6 V is applied. Calculate the minority carrier concentration, n, at the edge ofthe depletion region on the p-side, x=-p-Give your answer in unit of cm3. Answers within 5%6 error will be considered correct.Enter answer here14. Under a forward bias of 0.6 V, calculate the minority carrier concentration, P, at the edge of the depletion regionon the n-side, I = In-Give your answer in unit of cm³. Answers within 5% error will be considered correct.Enter answer here15. Under a forward bias of 0.6 V, calculate the current density, Jtotal, in unit of A/cm².Answers within 10% error will be considered correct.Enter answer here

Given: NA=1×1016 cm-3 on the p-side,ND=2×1016 cm-3 on the n-side,τn=10-6 sec and τp=10-8 sec.

12. Use this information to answer Question 12-16: A silicon pn junction (step junction) has doping densities of N₁ = 1 x 10¹6 cm³ on the p-side and N₁ = 2 x 10¹6 cm on the n-side. Carrier lifetimes are given as T = 10s and T₂ = 10 s. Assume long diode, i.e. long quasi-neutral regions. Calculate the built-in voltage in unit of V. Answers within 5% error will be considered correct. Enter answer here 13. Suppose now that a forward bias of 0.6 V is applied. Calculate the minority carrier concentration, n, at the edge of the depletion region on the p-side, z = -₂. Give your answer in unit of cm. Answers within 5% error will be considered correct. Enter answer here 14. Under a forward bias of 0.6 V, calculate the minority carrier concentration, P, at the edge of the depletion region on the n-side, z = In- Give your answer in unit of cm³. Answers within 5% error will be considered correct. Enter answer here 15. Under a forward bias of 0.6 V, calculate the current density, Jotal, in unit of A/cm². Answers within 10% error will be considered correct. Enter answer here

12. Use this information to answer Question 12-16: A silicon pn junction (step junction) has doping densities of N₁ = 1 x 10¹6 cm³ on the p-side and N₁ = 2 x 10¹6 cm on the n-side. Carrier lifetimes are given as T = 10s and T₂ = 10 s. Assume long diode, i.e. long quasi-neutral regions. Calculate the built-in voltage in unit of V. Answers within 5% error will be considered correct. Enter answer here 13. Suppose now that a forward bias of 0.6 V is applied. Calculate the minority carrier concentration, n, at the edge of the depletion region on the p-side, z = -₂. Give your answer in unit of cm. Answers within 5% error will be considered correct. Enter answer here 14. Under a forward bias of 0.6 V, calculate the minority carrier concentration, P, at the edge of the depletion region on the n-side, z = In- Give your answer in unit of cm³. Answers within 5% error will be considered correct. Enter answer here 15. Under a forward bias of 0.6 V, calculate the current density, Jotal, in unit of A/cm². Answers within 10% error will be considered correct. Enter answer here

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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