Consider a silicon pn junction at T= 300 K with acceptor doping concentrations of 101 cm and donor doping concentrations of 1015cm Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/ n, = 1.5 x 10 cm E, = 1.035 x 10-F/cm
Consider a silicon pn junction at T= 300 K with acceptor doping concentrations of 101 cm and donor doping concentrations of 1015cm Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/ n, = 1.5 x 10 cm E, = 1.035 x 10-F/cm
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Transcribed Image Text:Consider a silicon pn junction at T = 300 K with acceptor doping concentrations of 1016 cm and
donor doping concentrations of 1015 cm.
Calculate the width of the space charge region in the pn junction when a reverse biased voltage
of 5 V is applied.
Note/ n, = 1.5 x 1010 cm-3
E = 1.035 x 10-12F/cm
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