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5x1016 cm and Na -3 The doping concentrations of p-n junction are Na 1.5x10° cm, and the minority carrier lifetimes are tro = 2 x 10" s and Tho = 8x 10*s. The electron mobility is 965 cm²/V-s and the holes mobility is 386 cm²/V-s and The cross sectional area is A = 5x 10* cm². Calculate (a) the ideal reverse-saturation current due to holes, (b) the ideal reverse-saturation current due to electrons, (c) the hole concentration at x = xn for Va = 0.8 Vbi (built-in voltage), (d) the electron current at x = Xn for Va = 0.8 Vbi-, and (e) the electron current at x = Xn + (1/2) L, (diffusion length) for Va = 0.8 Vbi- || 16 -3 S %3D

5x1016 cm and Na -3 The doping concentrations of p-n junction are Na 1.5x10° cm, and the minority carrier lifetimes are tro = 2 x 10" s and Tho = 8x 10*s. The electron mobility is 965 cm²/V-s and the holes mobility is 386 cm²/V-s and The cross sectional area is A = 5x 10* cm². Calculate (a) the ideal reverse-saturation current due to holes, (b) the ideal reverse-saturation current due to electrons, (c) the hole concentration at x = xn for Va = 0.8 Vbi (built-in voltage), (d) the electron current at x = Xn for Va = 0.8 Vbi-, and (e) the electron current at x = Xn + (1/2) L, (diffusion length) for Va = 0.8 Vbi- || 16 -3 S %3D

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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The doping concentrations of p-n junction are N = 5x1016 cm and Na = 1.5x101 cm 10*s. The electron mobility is 965 cm/V-s and the holes mobility is 386 cm/V-s and The cross sectional area is A ideal reverse-saturation current due to holes, (b) the ideal reverse-saturation current due to electrons, (c) the hole concentration at x (built-in voltage), (d) the electron current at x = Xn for Va = 0.8 Vbi-, and (e) the electron current at x = xn + (1/2) L, (diffusion length) for Va = 0.8 Vbi- -3 and the minority carrier lifetimes are tno = 2 x 10' s and tno = 8x 5x 10* cm?. Calculate (a) the Xn for Va 0.8 Vbi
Transcribed Image Text:The doping concentrations of p-n junction are N = 5x1016 cm and Na = 1.5x101 cm 10*s. The electron mobility is 965 cm/V-s and the holes mobility is 386 cm/V-s and The cross sectional area is A ideal reverse-saturation current due to holes, (b) the ideal reverse-saturation current due to electrons, (c) the hole concentration at x (built-in voltage), (d) the electron current at x = Xn for Va = 0.8 Vbi-, and (e) the electron current at x = xn + (1/2) L, (diffusion length) for Va = 0.8 Vbi- -3 and the minority carrier lifetimes are tno = 2 x 10' s and tno = 8x 5x 10* cm?. Calculate (a) the Xn for Va 0.8 Vbi
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