Consider a silicon pn junction at T = 300 K with acceptor doping concentrations of 1010 cm and donor doping concentrations of 1015 cm-3 Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/n, 1.5 x 1010 cm-3 %3D & = 1.035 x 10- F/cm

Consider a silicon pn junction at T = 300 K with acceptor doping concentrations of 1010 cm and donor doping concentrations of 1015 cm-3 Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/n, 1.5 x 1010 cm-3 %3D & = 1.035 x 10- F/cm

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

Consider a silicon pn junction at T = 300 K with acceptor doping concentrations of 1010 cm and
donor doping concentrations of 1015 cm-3.
Calculate the width of the space charge region in the pn junction when a reverse biased voltage
of 5 V is applied.
Note/ n, = 1.5 x 101 cm-3
E = 1.035 x 10F/cm

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