A step p-n junction is made in silicone with the following specifications: The current density forelectrons (Jno ) is 15 A / cm?, and the current density for holes (Jpo) is 8 A / cm', electron and holemobility are 0.1 m:V"is"! and 0.5 m:V-is"- respectively, the hole's diffusion constant (20 cmls), theelectron's diffusion constant ( 30 cm ls), the relative permittivity ( E, = 11.7), T, and T, are 2 x 106and 4 x 105 respectively, the hole's diffusion length equals ( 200um),the electron's diffusion lengthequals (300lm), and the intrinsic carriers concentration ( n,= 1,5x1010 cm*). Calculate the following:1- The built-in potential Vp.2- The concentration of the majority and the minority carriers in both P-and N-regions.3- The total depletion region width of the junction.4- The maximum electric field at zero bias and 5V bias.

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A step p-n junction is made in silicone with the following specifications: The current density for electrons (Jno) is 15 A / cm?, and the current density for holes (Jpo) is 8 A/ cm², electron and hole mobility are 0.1 m:V"s and 0.5 m:V"'s" respectively, the hole's diffusion constant (20 cm ls), the electron's diffusion constant ( 30 cm ls), the relative permittivity ( & = 11.7), T, and T, are 2 x 10-6 and 4 x 10s respectively, the hole's diffusion length equals ( 200lm),the electron's diffusion length equals (300um), and the intrinsic carriers concentration ( n,= 1.5x1010 cm). Calculate the following: 1- The built-in potential Vp. 2- The concentration of the majority and the minority carriers in both P-and N-regions. 3- The total depletion region width of the junction. 4- The maximum electric field at zero bias and 5V bias.

A step p-n junction is made in silicone with the following specifications: The current density for electrons (Jno) is 15 A / cm?, and the current density for holes (Jpo) is 8 A/ cm², electron and hole mobility are 0.1 m:V"s and 0.5 m:V"'s" respectively, the hole's diffusion constant (20 cm ls), the electron's diffusion constant ( 30 cm ls), the relative permittivity ( & = 11.7), T, and T, are 2 x 10-6 and 4 x 10s respectively, the hole's diffusion length equals ( 200lm),the electron's diffusion length equals (300um), and the intrinsic carriers concentration ( n,= 1.5x1010 cm). Calculate the following: 1- The built-in potential Vp. 2- The concentration of the majority and the minority carriers in both P-and N-regions. 3- The total depletion region width of the junction. 4- The maximum electric field at zero bias and 5V bias.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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