A semiconductor junction diode, we can say that: a) The diode is composed of two types of crystal, one positive side (Anode) and the other P-type (Cathode) side, allowing the flow of charge from N to P. b) It is an electronic component that has two terminals, the Anode (with material of type N - Electrons) and Cathode (with material of type P - Gaps), which allows the flow of charge from P to N. c) It is the union of a P-type crystal and an N-type crystal, thus creating a PN junction, thus creating a simple solid-state device, the junction semiconductor diode. d) At a temperature of 25 degrees Celsius, the depletion barrier has a potential barrier, which for silicon is 0.7 volts and for germanium it is 0.3 volts. e) None of the above options is correct. Choose one of the alternatives
A semiconductor junction diode, we can say that:
a) The diode is composed of two types of crystal, one positive side (Anode) and the other P-type (Cathode) side, allowing the flow of charge from N to P.
b) It is an electronic component that has two terminals, the Anode (with material of type N - Electrons) and Cathode (with material of type P - Gaps), which allows the flow of charge from P to N.
c) It is the union of a P-type crystal and an N-type crystal, thus creating a PN junction, thus creating a simple solid-state device, the junction semiconductor diode.
d) At a temperature of 25 degrees Celsius, the depletion barrier has a potential barrier, which for silicon is 0.7 volts and for germanium it is 0.3 volts.
e) None of the above options is correct.
Choose one of the alternatives
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