An n-type Si semiconductor containing 10° phosphorus (donor) atoms cm-3 has been doped with 1017 boron (acceptor) atoms cm³. Calculate the electron and hole concentrations in this semiconductor.

Consider silicon at T =300 k is doped with donor impurities No = 2.8 × 101⁹ atoms / cm3 and Nc -2.8×101⁹ cm-³ 1. Draw the energy band diagram for this semiconductor and label all the energy levels? 2. What is the type of semiconductor?

n-type semiconductors a. are produced when Indium is added as an impurity to Germanium b. uses trivalent impurity c. are produced when phosphorous is added as an impurity to silicon d. are produced when boron is added as an impurity to silicon

The equilibrium electron and hole concentration for a semiconductor is 3x1017/cm3 and 2800 /cm3. Estimate the intrinsic carrier concentration of the semiconductor.

When a pentavalent impurity is added to a pure semiconductor, it becomes ......... 1. An insulator 2. An intrinsic semiconductor 3. p-type semiconductor 4. n-type semiconductor

In an extrinsic semiconductor, both n type and p type impurities are mixed. If 1.5x1010/cm3 is the intrinsic carrier concentration and 2.25x1016/cm3 is the concentration of p type impurities mixed, then what will be concentration of n type impurities?

Suppose a semiconductor has ND=1016/cm3and ni =1010/cm3. What are the equilibrium electron and hole concentrations?

Determine the following: a. This is the type of semiconductor produced due to doping. b.The type of doping that is achieved by replacing a Si atom with an atom with fewer electrons in the outer shell c. Semiconductors that contain both donor and acceptor atoms are called

In a Schottky diode, the silcon is usually a. un-doped semiconductor b. N-type c. silicon is not used d. P-type

Determine the negative resistance for the tunnel diode in the figure between ?T = 0.2 ? and ?T = 0.4