The maximum electric field in a reverse-biased semiconductor p-n junction at T-300K is to be JEmax=1x10° V/cm. the doping concentrations are Np-1x105 cm and NA-2x10 cm. Determine the reverse-bias voltage (in volt) that will produce this maximum electric field. Where n = 2.1 x 10° cm and , E 12.9.
The maximum electric field in a reverse-biased semiconductor p-n junction at T-300K is to be JEmax=1x10° V/cm. the doping concentrations are Np-1x105 cm and NA-2x10 cm. Determine the reverse-bias voltage (in volt) that will produce this maximum electric field. Where n = 2.1 x 10° cm and , E 12.9.
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ISBN:9780133923605
Author:Robert L. Boylestad
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The maximum electric field in a reverse - biased semiconductor p - n junction at T - 300K is to be | Emax = 1 * 10% V / cm. the doping concentrations are Nv = 1 * 10 'cm and Nx = 2x10 cm. Determine the reverse - bias voltage (in volt) that will produce this maximum electric field. Where n = 2.1 x 10 cm and, es - 12.9.
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