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Determine the hole mobility in the p-region. Determine the thermal equilibrium electron concentration Determine the intrinsic carrier concentration.

Determine the hole mobility in the p-region. Determine the thermal equilibrium electron concentration Determine the intrinsic carrier concentration.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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A particular pn junction at T = 300 K is doped with impurity concentrations of Na = 1.2 x 10¹4 cm³ and N₂ = 2 x 10¹4 cm³. The thermal equilibrium hole concentration is p. = 1.1 x 10¹4 cm³. Consider the resistivity of the n-side is 40 0-cm and of the p-side is 20 -cm. Assume complete ionoization and let the thermal voltage V₂ = 25 mV, the electron charge 1.6 X 10-¹9 and the electric permittivity of the semiconductor , = 13.1€, with = 8.85 x 10-14 F/cm. Determine the hole mobility in the p-region. Determine the thermal equilibrium electron concentration Determine the intrinsic carrier concentration.
Transcribed Image Text:A particular pn junction at T = 300 K is doped with impurity concentrations of Na = 1.2 x 10¹4 cm³ and N₂ = 2 x 10¹4 cm³. The thermal equilibrium hole concentration is p. = 1.1 x 10¹4 cm³. Consider the resistivity of the n-side is 40 0-cm and of the p-side is 20 -cm. Assume complete ionoization and let the thermal voltage V₂ = 25 mV, the electron charge 1.6 X 10-¹9 and the electric permittivity of the semiconductor , = 13.1€, with = 8.85 x 10-14 F/cm. Determine the hole mobility in the p-region. Determine the thermal equilibrium electron concentration Determine the intrinsic carrier concentration.
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