Consider a silicon pn junction at T = 300 K, NA ND= 1x10¹6 cm³. The minority carrierlifetimes are tn = 0.01 us and tp = 0.01 us. The junction is forward biased withV₂ = 0.6V. The minority carrier diffusion coefficients are D₂ = 20 cm²/s, Dp = 10 cm²/s.n₁ = 1.5x10¹⁰ cm-³Xp-typeDepletion regionn-typea)Calculate the excess electron concentration as a function of x in the p side(see the figure above).b)Calculate the electron diffusion current density at x = 0.Calculate the hole current density at x = 0.

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Consider a silicon pn junction at T = 300 K. NAND= 1x10¹6 cm³. The minority carrier lifetimes are tn = 0.01 us and tp = 0.01 us. The junction is forward biased with V₁ = 0.6V. The minority carrier diffusion coefficients are D₂ = 20 cm²/s, D₂ = 10 cm²/s. n₁ = 1.5x10¹⁰ cm-³ X p-type Depletion region n-type a) Calculate the excess electron concentration as a function of x in the P side (see the figure above). b) Calculate the electron diffusion current density at x = 0. Calculate the hole current density at x = 0.

Consider a silicon pn junction at T = 300 K. NAND= 1x10¹6 cm³. The minority carrier lifetimes are tn = 0.01 us and tp = 0.01 us. The junction is forward biased with V₁ = 0.6V. The minority carrier diffusion coefficients are D₂ = 20 cm²/s, D₂ = 10 cm²/s. n₁ = 1.5x10¹⁰ cm-³ X p-type Depletion region n-type a) Calculate the excess electron concentration as a function of x in the P side (see the figure above). b) Calculate the electron diffusion current density at x = 0. Calculate the hole current density at x = 0.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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