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Consider a pn junction diode at 300 K under forward applied bias 0.7 V. To design a diode with hole and electron curren densities 5 A/cm? and 2 A/cm? respectively at the edges o space charge region, determine the donor concentration and acceptors concentration in n and p semiconductors of the pr junction. Dn 25 cm?/s Dp 10 cm?/s

Consider a pn junction diode at 300 K under forward applied bias 0.7 V. To design a diode with hole and electron curren densities 5 A/cm? and 2 A/cm? respectively at the edges o space charge region, determine the donor concentration and acceptors concentration in n and p semiconductors of the pr junction. Dn 25 cm?/s Dp 10 cm?/s

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Consider a pn junction diode at 300 K under forward applied bias 0.7 V. To design a diode with hole and electron current densities 5 A/cm? and 2 A/cm? respectively at the edges of space charge region, determine the donor concentration and acceptors concentration in n and p semiconductors of the pn junction. Dn 25 cm?/s 10 cm?/s Dp 5x10-7s 5x107 s 1.5x1010 cm Tno Tpo -3 ni
Transcribed Image Text:Consider a pn junction diode at 300 K under forward applied bias 0.7 V. To design a diode with hole and electron current densities 5 A/cm? and 2 A/cm? respectively at the edges of space charge region, determine the donor concentration and acceptors concentration in n and p semiconductors of the pn junction. Dn 25 cm?/s 10 cm?/s Dp 5x10-7s 5x107 s 1.5x1010 cm Tno Tpo -3 ni
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