2. An N-type silicon sample has an arsenic dopant density of 10¹7 cm³³. Determine: a) The temperature at which half the impurity atoms are ionized. (finalize the equation for obtaining the temperature; no need to solve the equation. The same for part b) b) The temperature at which the intrinsic density exceeds the dopant density by a factor of 10. Assume Eg does not change with T. c) Assuming complete ionization, calculate the minority carrier density at 300 K and the location of the Fermi level referred to Ec.

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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cm of boron and 2.9x10¹6 cm³ of phosphorus.
2. An N-type silicon sample has an arsenic dopant density of 10¹7 cm³³. Determine:
a) The temperature at which half the impurity atoms are ionized. (finalize the
equation for obtaining the temperature; no need to solve the equation. The same
for part b)
b) The temperature at which the intrinsic density exceeds the dopant density by a
factor of 10. Assume Eg does not change with T.
c) Assuming complete ionization, calculate the minority carrier density at 300 K
and the location of the Fermi level referred to Ec.
Transcribed Image Text:cm of boron and 2.9x10¹6 cm³ of phosphorus. 2. An N-type silicon sample has an arsenic dopant density of 10¹7 cm³³. Determine: a) The temperature at which half the impurity atoms are ionized. (finalize the equation for obtaining the temperature; no need to solve the equation. The same for part b) b) The temperature at which the intrinsic density exceeds the dopant density by a factor of 10. Assume Eg does not change with T. c) Assuming complete ionization, calculate the minority carrier density at 300 K and the location of the Fermi level referred to Ec.
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