You have a semiconductor layer of GaAs that is doped with acceptors to a level of 1x1023 m-3. The band-gap energy of GaAs is 1.42 eV and the intrinsic carrier concentration (hi) at 300K is 2x1012 m-3. Some of the following statements regarding this semiconductor are TRUE and some are FALSE. i. At 300K the semiconductor has 1x1023 m-3 holes. ii. At 300K the semiconductor has 1x1023 m-3 electrons. iii. The minority carrier type in this semiconductor is electrons. iv. The minority carrier type in this semiconductor is holes. v. The electron concentration at 300K in this semiconductor is 2x1012 m-3. vi. The electron concentration at 300K in this semiconductor is 2x1035 m-3. vii. Increasing the temperature to 400K will cause the acceptor concentration to increase. viii. Increasing the temperature to 400K will cause the intrinsic carrier concentration to increase. Which of the following statements is correct: (ii) and (viii) are FALSE (iii) and (v) are FALSE (v) and (viii) are FALSE (v) and (vii) are FALSE ↓

You have a semiconductor layer of GaAs that is doped with acceptors to a level of 1x1023 m-3. The band-gap energy of GaAs is 1.42 eV and the intrinsic carrier concentration (hi) at 300K is 2x1012 m-3. Some of the following statements regarding this semiconductor are TRUE and some are FALSE. i. At 300K the semiconductor has 1x1023 m-3 holes. ii. At 300K the semiconductor has 1x1023 m-3 electrons. iii. The minority carrier type in this semiconductor is electrons. iv. The minority carrier type in this semiconductor is holes. v. The electron concentration at 300K in this semiconductor is 2x1012 m-3. vi. The electron concentration at 300K in this semiconductor is 2x1035 m-3. vii. Increasing the temperature to 400K will cause the acceptor concentration to increase. viii. Increasing the temperature to 400K will cause the intrinsic carrier concentration to increase. Which of the following statements is correct: (ii) and (viii) are FALSE (iii) and (v) are FALSE (v) and (viii) are FALSE (v) and (vii) are FALSE ↓

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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