1. A semi conductor diode has (one, two,three) pn junetion. 2. A semiconductor cliode has forward resistance of the order of 3. If the (ohm, kilo ohm, mega ohm) diode symbol aow of pn is (+ve) w.y.t. ba then diode is Po rwar d, reverse, no) biased,
1. A semi conductor diode has (one, two,three) pn junetion. 2. A semiconductor cliode has forward resistance of the order of 3. If the (ohm, kilo ohm, mega ohm) diode symbol aow of pn is (+ve) w.y.t. ba then diode is Po rwar d, reverse, no) biased,
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Subject: Electronic engineering
![1. A semi conductor diode has
(one, two,three) pn
junct'on-
2. A semiconductor cliode has forward resi stance of the order
of
3. If the
(om, kilo ohm, mega ohm)
diode
is (+ve)
wiy.t. ba
symbok
(fore
arrow of pn
then diode is
Ywar d, reverse, no) biased,
A. The
reverse saturation urrent in a pn diode is of
or der of
the
(mA, een, A).
5. The forward voltage drop across
a silicon' pn diode
is
about
(amplifier, rect
fien)
6.
The
pn diode
is used as
7. The dc resistance of a pn dide is
( same,
more, less)
than
its
resistanee.
8. The rateio of reverse resistance and forcward resistance
is
of a germanium diode
than
( equal, more, dess)
1.
in a crystal diode is due to
(minority, mag'ority) cariers.
9. The Leakage urent
10: The region near the junction of a diode that has.very
is called
few carri ers
the
region.
current
": In forward bias regron the diode
(linearly, exponen
'in voltoge
Cinereases /deereases)
trally, cubie, quadratic) with increate
across
the diode.
12.
The reverse
Satiration current
will gust
(double/ triple/ quadruple). in magritude for every
C 10/20/30) fold inerease in temperatire,](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F5ce62b2f-f7a3-4834-8e6f-9676a63f98b5%2F63eafc98-4897-4f3d-af9e-0575e123258e%2Fy5rbrh_processed.jpeg&w=3840&q=75)
Transcribed Image Text:1. A semi conductor diode has
(one, two,three) pn
junct'on-
2. A semiconductor cliode has forward resi stance of the order
of
3. If the
(om, kilo ohm, mega ohm)
diode
is (+ve)
wiy.t. ba
symbok
(fore
arrow of pn
then diode is
Ywar d, reverse, no) biased,
A. The
reverse saturation urrent in a pn diode is of
or der of
the
(mA, een, A).
5. The forward voltage drop across
a silicon' pn diode
is
about
(amplifier, rect
fien)
6.
The
pn diode
is used as
7. The dc resistance of a pn dide is
( same,
more, less)
than
its
resistanee.
8. The rateio of reverse resistance and forcward resistance
is
of a germanium diode
than
( equal, more, dess)
1.
in a crystal diode is due to
(minority, mag'ority) cariers.
9. The Leakage urent
10: The region near the junction of a diode that has.very
is called
few carri ers
the
region.
current
": In forward bias regron the diode
(linearly, exponen
'in voltoge
Cinereases /deereases)
trally, cubie, quadratic) with increate
across
the diode.
12.
The reverse
Satiration current
will gust
(double/ triple/ quadruple). in magritude for every
C 10/20/30) fold inerease in temperatire,
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