5. At room temperature, the intrinsic carrier density of junction diode made from the material has the following parameters: In P region: NA = 1017 cm3, ND = 1016 cm3, up = 450 cm?/V-s, Un = 1000 cm2/V-s, the excess carrier lifetime t, = 2 us and tn = 0.5 us. In N region: Np = 1016 cm3, Hp = 800 cm?/V-s, µ, = 2500 cm2/V-s, the excess carrier lifetime t, = 1 us and th = 2 us. The cross sectional area is 104 cm2. Determine: (a) The built-in voltage; (b) The current when the applied voltage in the forward direction is 0.5 V and the current when the applied bias in the reverse direction is 0.1 V; (c) The minority carrier concentration at x' = 1 um into N under a forward bias of 0.2 V. (d) For Va = 0.5 V, the electron current at x' = 1 um in the N region. %3D !3! %3D %3D

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5. At room temperature, the intrinsic carrier density of a semiconductor is 1011 cm3. An abrupt
junction diode made from the material has the following parameters:
In P region: NA = 1017 cm3, ND = 1016 cm 3, Hp = 450 cm?/V-s, un = 1000 cm2/V-s, the excess
carrier lifetime tp = 2 us and tTn = 0.5 µs.
In N region: Np = 1016 cm3, µ, = 800 cm?/V-s, u, = 2500 cm2/V-s, the excess carrier lifetime t, =
1 us and th = 2 us.
The cross sectional area is 104 cm2. Determine:
(a) The built-in voltage;
(b) The current when the applied voltage in the forward direction is 0.5 V and the current when
the applied bias in the reverse direction is 0.1 V;
(c) The minority carrier concentration at x' 1 um into N under a forward bias of 0.2 V.
(d) For Va = 0.5 V, the electron current at x' = 1 um in the N region.
Transcribed Image Text:5. At room temperature, the intrinsic carrier density of a semiconductor is 1011 cm3. An abrupt junction diode made from the material has the following parameters: In P region: NA = 1017 cm3, ND = 1016 cm 3, Hp = 450 cm?/V-s, un = 1000 cm2/V-s, the excess carrier lifetime tp = 2 us and tTn = 0.5 µs. In N region: Np = 1016 cm3, µ, = 800 cm?/V-s, u, = 2500 cm2/V-s, the excess carrier lifetime t, = 1 us and th = 2 us. The cross sectional area is 104 cm2. Determine: (a) The built-in voltage; (b) The current when the applied voltage in the forward direction is 0.5 V and the current when the applied bias in the reverse direction is 0.1 V; (c) The minority carrier concentration at x' 1 um into N under a forward bias of 0.2 V. (d) For Va = 0.5 V, the electron current at x' = 1 um in the N region.
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