Below is a schematic showing the cross-section of a Si n+ p junction solar cell. The area of the solar cell is 3 cm2 . Then n+ -type region is doped with a donor concentration ND = 2×1019 cm-3 and the p-type region is doped with an acceptor concentration NA = 1017 cm-3 . The intrinsic carrier concentration ni of Si at T = 300 K is 1.5x1010 cm-3 and the dielectric constant εr of Si is 12. In the conditions illustrated below, under AM1.5G illumination, the ammeter reads a current flow of 135 mA and the voltmeter reads a voltage of 0.62 V, respectively. a) Calculate the built-in potential Vbi of the p-n junction at 300 K in this solar cell. b) Calculate the depletion width W under thermal equilibrium at 300 K.  c) Derive the expression of the power output as function of forward bias voltage V. d) Estimate the maximum power output.

Q: A silicon diode at room temperature has a cross sectional area of 10μm². It is doped such that: Na =…

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Q: The total charge density in the depletion region of a silicon pn junction is 1.6x10-3 C/cm³. The…

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Q: Consider the circuit given below with R = 5k2 and Vcc = 12V. %3D The input signal is (Vs= 25 sin wt…

A: The circuit diagram is shown below, Where,R=5kΩVcc=12VIo=0.5mAVs=25sinωt mVVD=0.7V

Q: The reverse saturation currents of a Schottky diode and a p-n diode at 300 K are 5. 10-8 A and 10-12…

A: reverse saturation current of Schottky diode  ISS = 5×10-8 A  reverse saturation current of p-n…

Q: A diode is fabricated with NA  >>ND. What value of doping is required on the lightly doped…

A: As it is given that NA>>ND which shows the reverse breakdown voltage is much greater than the…

Q: Elaborate why Depletion Zone inside P-N Junction is a problematic area? What necessary measurement…

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Q: A pn diode has a resistivity of 1 Ω·cm on the p-type side and 0.02 Ω·cm on the n-type side. What is…

A: Given data; Resistivity for p-side = 1 Ω·cm Resistivity for n-side = 0.02 Ω·cm Cross sectional area…

Q: m²/s, and 8(0)-105 cm³. The on [cm³] at x=75 um is....

A: Given Data: P-Type silicon Temp, T= 300K Na = 5 x 1016 cm-3 τn0 = 5 x 10-7 s Dn = 30 cm2 /s δn(0) =…

Q: given diode, with n = 1, conducts 5mA with a junction voltage of 0.7, what is its saturation current…

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Q: What are the p-layers of silicon separated by a depletion layer from an n-type layer

A: The explanation is as follows.

Q: Explain what happens to the depletion width of a p-n junction as we increase the doping level on…

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Q: A diode has a doping of NA = 14 x 1018 /cm3 on the p-type side and ND = 1015 /cm3 on the n-type…

A: A Diode has the Following Doping concentration- We know that T=300∘K"…

Q: sheets Consider a pn junction diode at 300 K under forward applied bias 0.7 V. To design a diode…

A: Given  Vbi = 0.7 VJp= 5 A/cm2 Jn = 2 A/cm2Dp= 10 cm2/s  Dn = 25 cm2/sZ p0 = 5×10-7s  zn0 =…

Q: Two silicon diodes, with a forward voltage drop of 0.7 V, are used in the circuit shown in the…

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Q: Assume that the mobility of electrons in silicon at T = 300 K is un 1300 cm²/V-s. Also assume that…

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Q: -3 The P region of an abrupt junction diode has a resistivity of 0.1 ohm-cm and the N region has a…

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Q: QUESTION 2 A diode at room temperature has 0.4 V ocross its terminals when the cument through it is…

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Q: Calculate the junction capacitance of a silicon pn junction at T = 300 K with doping concentrations…

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Q: Elaborate why Depletion Zone inside P-N Junction is a problematic area? What necessary measures…

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Q: 4. Calculate the capacitance of the pn junction diode in the circuit below. Cjo = 100 pF and Vbi =…

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Q: Electrons and holes remain close to the PN junction because negative and positive charges attract…

A: We will refer the concept of PN junction formation

Q: Question2: A pn junction uses NA = 2x1016 /cm and ND=9x1015 /cm. Determine the built-in %3D voltage…

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Q: A silicon diode's scale current, Is at T = 92°C is 1.75 nA. If Is increases by 15% for each 1°C rise…

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Q: Q3:- Calculate the electron and hole concentration under steady-state illumination in an n-type…

A: We need to find out electron and hole concentration

Q: Question3: A uniform piece of n-type of silicon that is lum long senses a voltage of 1 V. Determine…

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Q: Calculate the built-in potential and depletion-region width for a silicon diode if NA is increased…

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A: Given data: wdo=1.5 μmϕj=0.8 V a) The expression for the depletion layer width is given as,…

Q: A silicon diode is forward biased at 0.9V. Find the resulting diode current.  Note: T = 25C, IS =…

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Q: 7. The electron concentration in silicon at T = 300 K is n = 5 x 10¹ cm³. 0 a. Is this a n-type or…

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Q: Find the reverse saturation current of having forward bias 0.2 V at room ter Boltzmann's constant =…

A: The current (I) in a p-n junction diode can be expressed as: I=I0(eeVKBT-1) Where, e, V, KB, T are…

Solar Cell

A solar cell, or photovoltaic cell, is a device that converts light into electricity directly through a photovoltaic effect, i.e., a physical and chemical event. It is a type of electromagnetic cell, defined as being used for its electrical properties, current, voltage, or resistance, which vary when exposed to light. Everyday cellular gadgets are usually the building blocks of photovoltaic modules, collectively known as solar panels. Single junction silicon solar cell can generate an open circuit of about 0.5 to 0.6 volts.