diode structure shown below. The diode has the following properties. P doping =1x1018cm•³ N doping =1x1016cm³ N-doped N. P+ umed 1x104 стх, 20x104 cm a) b) c) What is the built-in potential? Nhat is the equilibrium depletion width at Xy (at Vp=0) What is the max value of electric field? o00 o00 000

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Consider the Silicon P*N diode structure shown below. The diode
has the following properties.
P doping =1x1018cm³
N doping =1x106cm³
N-doped
N.
P+
umed
+
1x10-4 cmx,
20x104 cm
a)
b)
What is the built-in potential?
Nhat is the equilibrium depletion width at XN (at Vp=0)
What is the max value of electric field?
obo
lo00
Noo0
00
Transcribed Image Text:Consider the Silicon P*N diode structure shown below. The diode has the following properties. P doping =1x1018cm³ N doping =1x106cm³ N-doped N. P+ umed + 1x10-4 cmx, 20x104 cm a) b) What is the built-in potential? Nhat is the equilibrium depletion width at XN (at Vp=0) What is the max value of electric field? obo lo00 Noo0 00
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