asA silicon pn junction at T=300 K with zero applied bias has doping concentration of Np=5×10' cm³,NA-5x105 cm³, n=1.5×1010 cm³, and ɛ-11.9.a- Determine W in µm, and [Emax| in (V/m).b- Determine W in µm, and [Emax| in (V/m) when the pn junction is reverse-biased at VR= 8V.

We know formula for depletion width and maximum electric field.

Answered: A silicon pn junction at T-300 K with…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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A silicon pn junction at T-300 K with zero applied bias has doping concentration of Np=5x101 cm, NA-5x105 cm, n-1.5x1010 cm³, and E-11.9. a- Determine W in um, and (Emax| in (V/m). b- Determine W in pm, and [Emax| in (V/m) when the pn junction is reverse-biased at VR= 8V.