asA silicon pn junction at T=300 K with zero applied bias has doping concentration of Np=5×10' cm³,NA-5x105 cm³, n=1.5×1010 cm³, and ɛ-11.9.a- Determine W in µm, and [Emax| in (V/m).b- Determine W in µm, and [Emax| in (V/m) when the pn junction is reverse-biased at VR= 8V.

We know formula for depletion width and maximum electric field.

Answered: A silicon pn junction at T-300 K with…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

4 - The figure below shows a part of the energy band diagram of a p-n semiconductor junction. According to the situation shown in the figure, in the equilibrium condition, we can identify the currents as follows: *image attached* ( ) i1:hole diffusion current, i2:electron drift current, i3:hole drift current and i4:electron diffusion current. ( ) i1:hole drift current, i2:electron diffusion current, i3:hole diffusion current and i4:electron drift current. ( ) i1:electron diffusion current, i2:electron diffusion current, i3:hole drift current and i4:hole drift current. ( ) i1:electron drift current, i2:electron diffusion current, i3:hole diffusion current and i4:hole drift current. ( ) i1:hole drift current, i2:electron drift current, i3:hole diffusion current and i4:electron diffusion current.
In a Si diode, the junction area is 0.25 mm2 and the doping density of the n-type region is ND = 1017 / cm3. ; Additive density of p-type region NA = 1015 /cm3. ni = 1,5 1010 /cm3, q = 1,602 10-19 C, VT = 25mV, r = 12, o = 8,85 10-14 F/cm, μn =1350 cm2/Vs, μp = 480 cm2/Vs, τn = τp = 1 At room temperature, a. Find the densities of minority and majority carriers in both regions b. What is the potential wall height?
For the diode circuit to the right 8002 a V 1002 b 40mA 0.001V' a) To the left of points a and b, find the load-line relation by expressing the current, I with voltage, V. HINT: Write KCL equation for the circuit diagram and write I in terms of V from that KCL equation. This will be your load-line equation. b) Assume the diode has the following characteristic, using the load-line relation you found in (a), determine the operating voltage, V and current, I for the circuit. ip (mA) 20 15 10 5 Vp (V) 3.0 0.5 '1.0 1.5 2.0 2.5
Find the Total Current during the negative half cycle in milliamps . Find the Vout during the Positive half cycle. Consider the Diodes as a Silicon Zener Diode.
For the circuit shown, for what range of Vi(t) will the diode be in the breakdown region. 10k2 V-I characteristic curve Vi(t) 5kfl E D - 5V tout 0.7V O a. Vilt) greater than 9.45V. O b. Vilt) less than 1.7V O c. Vift) less than 2.7V O d. Viſt) less than 3.7V O e. Vit) less than - 26V. O Vit less than -15V. Oo. None of the listed range O h. Vit greater than - 26V. OVit greoter than 3.7V
3. A metal contact to a n-type semiconductor can be considered as a p*-n junction with NA > ND. Draw an energy band diagram of the contact showing the Schottky barrier eoz and the depletion width d. Then draw the energy band diagram in forward and reverse biased conditions. Indicate how the +V or -V bias affects the contact potential and the depletion width. Explain how the bias changes the forward current due to the injection of electrons from the semiconductor into the metal, and the reverse current Io from the flow of metal free carriers into the semiconductor. Show that the rectifying behavior is just like that in a p-n junction.
In the circuit shown below. Let Vm-35 V and i-20 mA and VpQ -0.7 V: iD 3 kQ 0.8 kO Vmcos(@t)V For t Os, the current in the diode equals: Oa. 0 mA Ob. 4 mA Oc. 2 mA Od. 6 mA If t = T/4, then the current in the diode equals: Oa. 6.29 mA Ob. 5.03 mA Oc. 4,03 mA Od. 7.86 mA If t = T/2, then the current in the diode equals: Oa. 15.24 mA Ob. 13.24 mA Oc. 19.24 mA Od. 17.24 mA
After solving a circuit with ideal diodes (Vf=0), what check is necessary for diodes initially assumed to be on? Off? We must check to see that reverse voltage appears across all diodes assumed to be on, and we must check to see that forward current flows in diodes assumed to be off We must check to see that forward current flows in diodes assumed to be on, and we must check to see that reverse voltage appears across all diodes assumed to be off
3. In the following circuits, given source voltage Vs=9V, R1, R2 and R3 all are 1kOhms. Answer the questions by considering the diodes as ideal and practical silicon ones respectively. Vs Vs Vs R2 R2 R2 Vout P D R1 R1 R3 R1 (a) Vout = ? (b) Vp = ? (c) Vp = ? Note: Vp means the voltage at point p. w
With the given circuit below, if the input voltage is 10 volts peak-to-peak and the diode is silicon, how much is the output voltage in volts on the negative half cycle? (put polarity (+ or -) and values only) + RL out
3) Draw V-I Charters tics of p-n Junction and explain forward bias & Reverse Bias
The Zener diode shown below, is specified to have Vz-20V at Izr, IzK = 0.1 mA, IzT =17 mA, and r, = 14 2. Voc = 30V. 1) Replace the Zener diode with its Model. 2) Find the current I with no Load. 3) Find Vo with no Load when VCC = 30V. 4) Find R1 Min. r30V 2000 Vz = 20V %3D 68-V zener

Recommended textbooks for you

Introductory Circuit Analysis (13th Edition)

Electrical Engineering

ISBN:

9780133923605

Author:

Robert L. Boylestad

Publisher:

PEARSON

Delmar's Standard Textbook Of Electricity

Electrical Engineering

ISBN:

9781337900348

Author:

Stephen L. Herman

Publisher:

Cengage Learning

Programmable Logic Controllers

Electrical Engineering

ISBN:

9780073373843

Author:

Frank D. Petruzella

Publisher:

McGraw-Hill Education

Introductory Circuit Analysis (13th Edition)

Electrical Engineering

ISBN:

9780133923605

Author:

Robert L. Boylestad

Publisher:

PEARSON

Delmar's Standard Textbook Of Electricity

Electrical Engineering

ISBN:

9781337900348

Author:

Stephen L. Herman

Publisher:

Cengage Learning

Programmable Logic Controllers

Electrical Engineering

ISBN:

9780073373843

Author:

Frank D. Petruzella

Publisher:

McGraw-Hill Education

Fundamentals of Electric Circuits

Electrical Engineering

ISBN:

9780078028229

Author:

Charles K Alexander, Matthew Sadiku

Publisher:

McGraw-Hill Education

Electric Circuits. (11th Edition)

Electrical Engineering

ISBN:

9780134746968

Author:

James W. Nilsson, Susan Riedel

Publisher:

PEARSON

Engineering Electromagnetics

Electrical Engineering

ISBN:

9780078028151

Author:

Hayt, William H. (william Hart), Jr, BUCK, John A.

Publisher:

Mcgraw-hill Education,

SEE MORE TEXTBOOKS

A silicon pn junction at T-300 K with zero applied bias has doping concentration of Np=5x101 cm, NA-5x105 cm, n-1.5x1010 cm³, and E-11.9. a- Determine W in um, and (Emax| in (V/m). b- Determine W in pm, and [Emax| in (V/m) when the pn junction is reverse-biased at VR= 8V.