In a Si diode, the junction area is 0.25 mm2 and the doping density of the n-type region is ND = 1017 / cm3. ; Additive density of p-type region NA = 1015 /cm3 . ni = 1,5 1010 /cm3 , q = 1,602 10-19 C, VT = 25 mV, r = 12, o = 8,85 10-14 F/cm, μn =1350 cm2 /Vs, μp = 480 cm2 /Vs, τn = τp = 1 At room temperature, a. Find the densities of minority and majority carriers in both regions b. What is the potential wall height?
In a Si diode, the junction area is 0.25 mm2 and the doping density of the n-type region is ND = 1017 / cm3. ; Additive density of p-type region NA = 1015 /cm3 . ni = 1,5 1010 /cm3 , q = 1,602 10-19 C, VT = 25 mV, r = 12, o = 8,85 10-14 F/cm, μn =1350 cm2 /Vs, μp = 480 cm2 /Vs, τn = τp = 1 At room temperature, a. Find the densities of minority and majority carriers in both regions b. What is the potential wall height?
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In a Si diode, the junction area is 0.25 mm2 and the doping density of the n-type region is ND = 1017 / cm3. ; Additive density of p-type region NA = 1015 /cm3
. ni = 1,5 1010 /cm3
, q = 1,602 10-19 C, VT = 25
mV, r = 12, o = 8,85 10-14 F/cm, μn =1350 cm2
/Vs, μp = 480 cm2
/Vs, τn = τp = 1
At room temperature,
a. Find the densities of minority and majority carriers in both regions
b. What is the potential wall height?
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