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In a Si diode, the junction area is 0.25 mm2 and the doping density of the n-type region is ND = 1017 / cm3. ; Additive density of p-type region NA = 1015 /cm3 . ni = 1,5 1010 /cm3 , q = 1,602 10-19 C, VT = 25 mV, r = 12, o = 8,85 10-14 F/cm, μn =1350 cm2 /Vs, μp = 480 cm2 /Vs, τn = τp = 1 At room temperature, a. Find the densities of minority and majority carriers in both regions b. What is the potential wall height?

In a Si diode, the junction area is 0.25 mm2 and the doping density of the n-type region is ND = 1017 / cm3. ; Additive density of p-type region NA = 1015 /cm3 . ni = 1,5 1010 /cm3 , q = 1,602 10-19 C, VT = 25 mV, r = 12, o = 8,85 10-14 F/cm, μn =1350 cm2 /Vs, μp = 480 cm2 /Vs, τn = τp = 1 At room temperature, a. Find the densities of minority and majority carriers in both regions b. What is the potential wall height?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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In a Si diode, the junction area is 0.25 mm2 and the doping density of the n-type region is ND = 1017 / cm3. ; Additive density of p-type region NA = 1015 /cm3
. ni = 1,5 1010 /cm3
, q = 1,602 10-19 C, VT = 25
mV, r = 12, o = 8,85 10-14 F/cm, μn =1350 cm2
/Vs, μp = 480 cm2
/Vs, τn = τp = 1

At room temperature,

a. Find the densities of minority and majority carriers in both regions

b. What is the potential wall height?

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