1. Pure germanium has intrinsic carrier concentration is 2.5×10 cm³ doped by accepter indium atoms with 4x10¹4 cm³. Find the conductivity before and after doping, if the electrons and holes mobility's are 3800 cm³v¹s¹, 1800 cm³v¹s¹ respectively. 2. How far is the fermi level from the edge of the valence band, if the concentration of acceptor silicon atom is 5×10²¹ m³ at 300 °K and m₁ = 0.6 m. 3. Calculate the resulting conductivity from the majority carrier in each region for extrinsic semiconductor has the donor and acceptor concentration are 1022 m³, 1024 m³, hole and electron mobility's are 0.05 m²v's¹, 0.13 m²v's respectively.

1. Pure germanium has intrinsic carrier concentration is 2.5×10 cm³ doped by accepter indium atoms with 4x10¹4 cm³. Find the conductivity before and after doping, if the electrons and holes mobility's are 3800 cm³v¹s¹, 1800 cm³v¹s¹ respectively. 2. How far is the fermi level from the edge of the valence band, if the concentration of acceptor silicon atom is 5×10²¹ m³ at 300 °K and m₁ = 0.6 m. 3. Calculate the resulting conductivity from the majority carrier in each region for extrinsic semiconductor has the donor and acceptor concentration are 1022 m³, 1024 m³, hole and electron mobility's are 0.05 m²v's¹, 0.13 m²v's respectively.

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

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