2 Transistors are manufactured by doping semiconductors. The diffusion coefficient of phosphorus in S, is D = 6.5 x 101 em/s at a temperature of 1100°C. Assume the source provides a surface concentration of 1020 atoms/cm and the diffusion time is one hour. Assume that the silicon wafer initially contains no phosphorus. Calculate the depth at which the concentration of phosphorus will be 108 atoms/cm'. Table Tabulation of Error Function Values erfiz) erfiz) 0.9340 0.9523 0.9661 0.55 0.5633 13 0.025 0.60 0.639 14 1.5 0.05 0.0564 0.65 0.6420 0.6778 0.10 0.15 0.20 0.1125 0.70 16 0.9763 0.7112 0.7421 0.1680 0.75 1.7 0.9838 02227 O.80 0.9891 025 0.2763 0.7707 19 0.9928 0.30 0.35 0.40 0.3286 0.3794 0.90 0.7970 2.0 0.9953 0.95 1.0 1.1 12 OR209 0.8427 2.2 2.4 2.6 2.8 0.9981 0.4284 0.4755 0.9993 0.45 0.9098 050 0.S205 0.9103 0.9999
2 Transistors are manufactured by doping semiconductors. The diffusion coefficient of phosphorus in S, is D = 6.5 x 101 em/s at a temperature of 1100°C. Assume the source provides a surface concentration of 1020 atoms/cm and the diffusion time is one hour. Assume that the silicon wafer initially contains no phosphorus. Calculate the depth at which the concentration of phosphorus will be 108 atoms/cm'. Table Tabulation of Error Function Values erfiz) erfiz) 0.9340 0.9523 0.9661 0.55 0.5633 13 0.025 0.60 0.639 14 1.5 0.05 0.0564 0.65 0.6420 0.6778 0.10 0.15 0.20 0.1125 0.70 16 0.9763 0.7112 0.7421 0.1680 0.75 1.7 0.9838 02227 O.80 0.9891 025 0.2763 0.7707 19 0.9928 0.30 0.35 0.40 0.3286 0.3794 0.90 0.7970 2.0 0.9953 0.95 1.0 1.1 12 OR209 0.8427 2.2 2.4 2.6 2.8 0.9981 0.4284 0.4755 0.9993 0.45 0.9098 050 0.S205 0.9103 0.9999
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
Section: Chapter Questions
Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...
Related questions
Question
Q2.
Transistors are manufactured by doping semiconductors. The diffusion coefficient of phosphorus in Si is D = 6.5 x 10-11 mm2/s at a temperature of 950°C. Assume the source provides a surface concentration of
1020 atoms/cm3 and the diffusion time is one hour. Assume that the silicon wafer initially contains no phosphorus. Calculate the depth at which the concentration of phosphorus will be 1018 atoms/cm3.
Transcribed Image Text:2 Transistors are manufactured by doping semiconductors.
The diffusion coefficient of phosphorus in S, is D = 6.5 x
1013 cm?/s at a temperature of 1100°C. Assume the source
provides a surface concentration of 1020 atoms/cm' and the
diffusion time is one hour. Assume that the silicon wafer
initially contains no phosphorus. Calculate the depth at
which the concentration of phosphorus will be 1018
atoms/cm.
Table
Tabulation of Error Function Values
erfiza
erfiz)
erfiz)
0.55
0.5633
1.3
0.025
0.05
0.9340
0.9523
0.9661
0.0282
0.60
0.65
0.609
0.6420
06778
0.7112
0.7421
14
0.0564
1.5
0.10
0.1125
0.70
16
0.9763
0.15
0.20
0.1680
0.75
0.80
1.7
18
0.9838
0.2227
02763
0.9891
0.25
OKS
0.7707
19
0.9928
0.30
0.3286
0.90
0.7970
2.0
0.9953
0.35
0.3794
0.95
0.8209
2.2
0.9981
0.40
0.4284
1.0
1.1
1.2
0.8427
0.8802
0.9993
0.9998
0.9999
2.4
0.45
0.50
0.4755
0.5205
2.6
2.8
09103
Expert Solution
This question has been solved!
Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.
This is a popular solution!
Trending now
This is a popular solution!
Step by step
Solved in 4 steps with 4 images
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, physics and related others by exploring similar questions and additional content below.Recommended textbooks for you
College Physics
Physics
ISBN:
9781305952300
Author:
Raymond A. Serway, Chris Vuille
Publisher:
Cengage Learning
University Physics (14th Edition)
Physics
ISBN:
9780133969290
Author:
Hugh D. Young, Roger A. Freedman
Publisher:
PEARSON
Introduction To Quantum Mechanics
Physics
ISBN:
9781107189638
Author:
Griffiths, David J., Schroeter, Darrell F.
Publisher:
Cambridge University Press
College Physics
Physics
ISBN:
9781305952300
Author:
Raymond A. Serway, Chris Vuille
Publisher:
Cengage Learning
University Physics (14th Edition)
Physics
ISBN:
9780133969290
Author:
Hugh D. Young, Roger A. Freedman
Publisher:
PEARSON
Introduction To Quantum Mechanics
Physics
ISBN:
9781107189638
Author:
Griffiths, David J., Schroeter, Darrell F.
Publisher:
Cambridge University Press
Physics for Scientists and Engineers
Physics
ISBN:
9781337553278
Author:
Raymond A. Serway, John W. Jewett
Publisher:
Cengage Learning
Lecture- Tutorials for Introductory Astronomy
Physics
ISBN:
9780321820464
Author:
Edward E. Prather, Tim P. Slater, Jeff P. Adams, Gina Brissenden
Publisher:
Addison-Wesley
College Physics: A Strategic Approach (4th Editio…
Physics
ISBN:
9780134609034
Author:
Randall D. Knight (Professor Emeritus), Brian Jones, Stuart Field
Publisher:
PEARSON