For Ge semiconductor, assume the Fermi energy levelis 0.1 ev below the conduction band energy Ec. Let theabsolute temperature T for items i and ii be 200 K.i.Find the number of quantum states between Ec and Ec +2. x kbTDetermine the probability of a state being empty of anii.electron at Ec+2. x kbT.ii.Find the temperature at which there is an electron at thestate Ec+0.2 x kbT with probability 30%iv.Repeat item ii by using the Boltzmann approximationrather than the Fermi-Dirac distributionFind the difference in temperature between items i andv.iv above and express this difference as percentage|

mass of electron, me=9.1×10-31 KgThe density or the number of quantum states available between the…

Answered: For Ge semiconductor, assume the Fermi…

Similar questions

The cell membrane has ion channels that can exist in two states, open or closed. When they are open, they let Na+ ions through. The energy of the open state is 4*10^-20 J. higher than the state of the closed channel. a. What proportion of the ion channels are open at a temperature of 20 C? b. How high should the temperature be so that 75% of the channels are open? Don't use Chat GPT otherwise I will report from bartleby.
Q2 part c
3
Calculate the hole velocity when a voltage of 5 V is applied through a semiconductor bar as below: V + 0.05 cm 0.55 cm (Mobility of hole is given as 450 cm²/Vs) Select one: A. 14500 cm/s B. 4090 cm/s C. 4500 cm/s D. 13180 cm/s 0.3 cm
For Ge semiconductor, assume the Fermi energy level is 0.1 eV below the conduction band energy Ec. Let the absolute temperature T for items i and ii be 200 K. i. Find the number of quantum states between Ec and Ec +0.1x4.6xkbT. ii.Determine the probability of a state being empty of an electron at Ec+0.1x4.6x kbT. ii. Find the temperature at which there is an electron at the state Ec+0.01x4.6x kbT with probability 30%. iv. Repeat item iii by using the Boltzmann approximation rather than the Fermi-Dirac distribution. v. Find the difference in temperature between items iii and iv above and express this difference as percentage.
Use T if it's True and F if it's False. Justify I. A semiconductor is characterized by having a very wide forbidden band, between conduction and valence.II. The band of the Energetic Interval where there are those electrons that can move freely and are free from the attraction of the atom is called conduction.III. In a semiconductor with donor atoms (for example P in Si), the donor level is just below the conduction band.IV. A diode will conduct current in only one direction and act as an open circuit when the current tries to move in the opposite direction.
d. What is the population inversion condition in semiconductor laser? How can you obtain population inversion condition? e. Draw and describe a typical structure of avalanche photodiode? Why do they make a p+ layer located at the encounter electrode?
A silicon layer measuring 1 micrometers thick contains an electron. if a 1D quantum well with infinite walls can accurately describe the semiconductor. Assume that the silicon's electron's effective mass is 0.26 x. (rest mass of electron) a. Determine the material's three lowest energy levels. b. What is the corresponding electron velocity at the lowest energy level if the energy can be understood as the kinetic energy of the electron?
For Ge semiconductor, assume the Fermi energy level is 0.15 eV below the conduction band energy Ec. Let the absolute temperature T for items i and ii be 200 K. i. Find the temperature at which there is an electron at the state Ec + 0.5 x KbT with probability 30%. ii. Repeat item i by using the Boltzmann approximation rather than the Fermi-Dirac distribution. ii. Find the difference in temperature between items i and i above and express this difference as percentage.