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2000 50 1000 Si Consider the following energy band diagram. The 20 Ha. D 500 10 semiconductor is Si maintained at 300K with E-Ef 200 15 100 = Ed/4 at x=L & -L, and Ef - E; = Ed4 at x=0. Note Hp. Dp 50 the choice of Ef as the energy reference and the 20 identification of carriers at various points on the 10000 200 5000 GaAs diagram. 100 Hai D 2000 50 Un, µp can be estimated from the figure. 1000 20 500 10 Hp.D, 200 100 1014 1015 1016 1017 1018 1019 1020 Impurity concentration (cm-) Figure 2.3 O John Wiley & Sons, Inc. All rights reserved. Mobility (cm²/V – s) Mobility (cm²/V – s) Diffusivity (cm²/s) Diffusivity (cm²/s)

2000 50 1000 Si Consider the following energy band diagram. The 20 Ha. D 500 10 semiconductor is Si maintained at 300K with E-Ef 200 15 100 = Ed/4 at x=L & -L, and Ef - E; = Ed4 at x=0. Note Hp. Dp 50 the choice of Ef as the energy reference and the 20 identification of carriers at various points on the 10000 200 5000 GaAs diagram. 100 Hai D 2000 50 Un, µp can be estimated from the figure. 1000 20 500 10 Hp.D, 200 100 1014 1015 1016 1017 1018 1019 1020 Impurity concentration (cm-) Figure 2.3 O John Wiley & Sons, Inc. All rights reserved. Mobility (cm²/V – s) Mobility (cm²/V – s) Diffusivity (cm²/s) Diffusivity (cm²/s)

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2000 50 Consider the following energy band diagram. The 1000 Si 20 500 Ha, D, semiconductor is Si maintained at 300K with E¡-Ef 10 200 5 = E/4 at x=L & -L, and Ef - E;= E/4 at x=0. Note 100 Hp. Dp 50 the choice of Ef as the energy reference and the 20 identification of carriers at various points on the 10000 200 diagram. 5000 GaAs 100 Hai Dn 2000 Un, Up can be estimated from the figure. 50 1000 20 500 H,.D, 10 200 100 1014 1015 1016 1017 1018 1019 1020 Impurity concentration (cm-) Figure 2.3 O John Wiley & Sons, Inc. All rights reserved. Mobility (cm²/V s) Mobility (cm²/V s) Diffusivity (cm²/s) Diffusivity (cm²/Is)
Transcribed Image Text:2000 50 Consider the following energy band diagram. The 1000 Si 20 500 Ha, D, semiconductor is Si maintained at 300K with E¡-Ef 10 200 5 = E/4 at x=L & -L, and Ef - E;= E/4 at x=0. Note 100 Hp. Dp 50 the choice of Ef as the energy reference and the 20 identification of carriers at various points on the 10000 200 diagram. 5000 GaAs 100 Hai Dn 2000 Un, Up can be estimated from the figure. 50 1000 20 500 H,.D, 10 200 100 1014 1015 1016 1017 1018 1019 1020 Impurity concentration (cm-) Figure 2.3 O John Wiley & Sons, Inc. All rights reserved. Mobility (cm²/V s) Mobility (cm²/V s) Diffusivity (cm²/s) Diffusivity (cm²/Is)
Ee EF Ev -L L. a. Draw the electrostatic potential (V) inside the semiconductor as a function of position x; b. Draw the electric field (E) inside the semiconductor as a function of x; c. Determine the resistivity of the x>L portion of semiconductor.
Transcribed Image Text:Ee EF Ev -L L. a. Draw the electrostatic potential (V) inside the semiconductor as a function of position x; b. Draw the electric field (E) inside the semiconductor as a function of x; c. Determine the resistivity of the x>L portion of semiconductor.
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