For a certain semiconductor ,= 1500 cm/V-sec, 4,= 1200 cm/V-sec, m, = 1.3 x 10-28 g and m, = 6.8 x 10-28 g. The kinetic energy in Valance band, when 100 V/Cm electric field is applied, is . .neV. .... a) 1.2 b) 2.5 c) 5.0 d) 9.8 e) 13.1 O a O b C O d e
Q: (Q3) (B) Find the value of Vig that makes the transistor of the circuit below in the saturation…
A: The voltage gain in the circuit is given as, β=200 The collector emitter voltage is given as, VCE=0…
Q: I. A bar of intrinsic silicon having a cross section area of 3 x 10m² has an n= 1.5 x 1016m-30 If He…
A: SOlution: givent hat A = 3x10-4 m2 ni = 1.5x1016 m-3 µe = 0.14 m2/Vs µP = 0.05 m2/Vs
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Q: (Q3) (B) Find the value of Veg that makes the transistor of the circuit below in the saturation…
A: Solution: Apply Kirchhoff's voltage law at the output terminal. Vcc=icRc+Vce10 V=ic×2×103 Ω+0ic=10…
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Q: 1I.A certain semiconductor p 500 cm'V-sec, u 1200 cm/V-see, m; = 1.3 x 10-g and m; = 1.7 x 10-2g.…
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Q: Q1: A bar of intrinsic silicon having a cross section area of 3x10ª m² has an n=1.5x1016 m3. If…
A: The cross section area, A = 3 x 10-4 m2. The intrinsic charge carrier density, ni = 1.5 x 1016 m-3.…
Q: ): Consider a GaAs semiconductor with a lattice constant a = 5.65 Å. QI (- i. ( (A) Van der Waals.…
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Q: In a transistor if a = 100 and emitter current is 10mA, then Ic is A. 100 mA В. 10mA C. 100.1 mA D.…
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- Figure 1 shows the absorption coefficient for several direct and indirect bandgap semiconductors. Analyses these figure in term of indirect bandgap materials. ABSORPTION COEFFICIENT (cm²) 106 105. 104 103. 10² 10 0.2 3 GaP 2 Si 0.6 PHOTON ENERGY (CV) 1.5 GaAs InP Figure 1 In0.53 Ga0.47As 1.4 WAVELENGTH (μm) 0.7 1.8. When UV photons with 380 nm wavelength strike on a semiconductor, a red photon emission from the semiconductor is observed. Explain the photon emission process in this semiconductor on the band diagram.The resistance ( k2) of a 1 cm' pure silicon crystal.[n-1x1011 cm3, le-1250 cm? V-ls, h-350 cm? V-ls1] 39 34.7 390 347
- 5. A transistor is biased with feedback resistor Rg of 100k2. If Vcc= 25V, Rc= 1k2 and B= 200. Find the values of zero signal Ic and Vce ? 6. Find the Q-point values in the circuit. Also find the minimum power rating of the transistor -12 V 33 k2 1.8 k2 B= 50 5.6 k2 560 2In the transistor circuit on the sideMaximum values are given below. Normalmaximum VCC voltage of the BJT under conditionscalculate. Pd max = 07/100 W Vce max = 20V Ic max = 100mA Bdc = 150QIA/ Find the resistivity of intrinsic Silicon if n;=1.516x10"c and u=1300 if donor -type impurity is added to the intrinsic of 1 atom per 10° silicon atoms find resistivity. Assume Np=5x10"electron /cm
- 4--N MOSFETs are used in the given circuit. Q1, Q2,….. The parameters of Qn MOS transistors are Vt=1V, γ=0, λ=0,μnCox=200μA/V2 and (W/L)1= (W/L) 2=….=(W/L)n=20 a) VGS=?, ID=?, gm=? b) Find the input and output impedance. c) Find the voltage gain.SOLVE IT IN DETAIL.When the forward bias voltage of a diode is changed form 0.6V to 0.7V, the current changes form 5 mA to 15 mA. Then its forward bias resistance is A. 0.01 N B 10 0 Qo.1AV1: A particular intrinsic semiconductor has a bandgap energy of 1.32 eV and has a resistivity of 60 2.cm at T = 300 K. Neglecting the change in mobility with temperature, determine the resistivity of the semiconductor at T = 330 K.