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It was found that in a semiconductor sample subjected to the Hall experiment the velocity of the majority carriers is 1x10 cm's while the sample resistance was found to be 1.8 KQ. The sample width is 2 cm, and its length is 4 cm while the samnple cross sectional area is 1 cm and the current through the sample length is 50 mA under an applied magnetic field of 1 KG. The mobility of the majority carriers will be: Select one: O A. 4.630e5 cm^2/V.s OB. 2.778e5 cm^2/V.s OC. 1.444e4 cm^2/N.s. O D. 9.000e11 cm^2/V.s

It was found that in a semiconductor sample subjected to the Hall experiment the velocity of the majority carriers is 1x10 cm's while the sample resistance was found to be 1.8 KQ. The sample width is 2 cm, and its length is 4 cm while the samnple cross sectional area is 1 cm and the current through the sample length is 50 mA under an applied magnetic field of 1 KG. The mobility of the majority carriers will be: Select one: O A. 4.630e5 cm^2/V.s OB. 2.778e5 cm^2/V.s OC. 1.444e4 cm^2/N.s. O D. 9.000e11 cm^2/V.s

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It was found that in a semiconductor sample subjected to the Hall experiment the velocity of the majority carriers is 1x10 cm's while the sample resistance was found to be 1.8 KQ. The sample width is 2 cm, and its length is 4 cm while the samnple cross sectional area is1 cm and the current through the sample length is 50 mA under an applied magnetic field of 1 KG. The mobility of the majority carriers will be: Select one: O A. 4.630e5 cm^2/V.s O B. 2.778e5 cm^2/V.s O C. 1.444e4 cm^2/V.s. O D. 9.000e11 cm^2/V.s
Transcribed Image Text:It was found that in a semiconductor sample subjected to the Hall experiment the velocity of the majority carriers is 1x10 cm's while the sample resistance was found to be 1.8 KQ. The sample width is 2 cm, and its length is 4 cm while the samnple cross sectional area is1 cm and the current through the sample length is 50 mA under an applied magnetic field of 1 KG. The mobility of the majority carriers will be: Select one: O A. 4.630e5 cm^2/V.s O B. 2.778e5 cm^2/V.s O C. 1.444e4 cm^2/V.s. O D. 9.000e11 cm^2/V.s
: Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 x 10-34 J.s Kg Si Ge Ga As mo 9.11 x 10-31 E, (eV) ni (cm-3) Hn (cm2/V – s) Hp (cm2/V – s) N. (cm-3) Ny (cm-3) 1.1 0.67 1.42 T 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10-19 C 8.85 x 10-12 F/m 1500 3900 8500 Eo 450 1900 400 1.05 x 10-34 J - s 2.78 x 1019 1.04 x 1019 4.45 x 1017 K 8.6 x 10-5 eV/K 9.84 x 1018 6 x 1018 7.72 x 1018 KT/q %3D m/m. 0.082 0.98 0.067 26 meV (T = 300 K) 3 x 108 m/s KT %3D m/m. 0.28 0.49 0.45 C Er (F/m) 11.7 16 13.1 Nair 1 %3D NGAAS = 3.66 Some useful relations EgALGa1-a As (T) = 1.424 + 1.247x EgInzGa1-, As (T) = 0.36 + 1.064.x 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10-5 Wb/cm2 %3D
Transcribed Image Text:: Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 x 10-34 J.s Kg Si Ge Ga As mo 9.11 x 10-31 E, (eV) ni (cm-3) Hn (cm2/V – s) Hp (cm2/V – s) N. (cm-3) Ny (cm-3) 1.1 0.67 1.42 T 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10-19 C 8.85 x 10-12 F/m 1500 3900 8500 Eo 450 1900 400 1.05 x 10-34 J - s 2.78 x 1019 1.04 x 1019 4.45 x 1017 K 8.6 x 10-5 eV/K 9.84 x 1018 6 x 1018 7.72 x 1018 KT/q %3D m/m. 0.082 0.98 0.067 26 meV (T = 300 K) 3 x 108 m/s KT %3D m/m. 0.28 0.49 0.45 C Er (F/m) 11.7 16 13.1 Nair 1 %3D NGAAS = 3.66 Some useful relations EgALGa1-a As (T) = 1.424 + 1.247x EgInzGa1-, As (T) = 0.36 + 1.064.x 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10-5 Wb/cm2 %3D
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