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nces in intrinsic carrier concentr st for Ge? Why is it lowest for Go ses with increasing temperature

nces in intrinsic carrier concentr st for Ge? Why is it lowest for Go ses with increasing temperature

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a) for Ge, Si and GaAs. (Why is ni highest for Ge? Why is it lowest for GaAs?) Explain qualitatively the differences in intrinsic carrier concentrations b) Explain qualitatively why ni increases with increasing temperature. 1500 T(*C) 1019 1000 500 200 100 27 List of band gaps of semiconductor materials. 1018 Band g @ 302 Group Material Symbol 1017 IV Diamond 5.5 Ge IV Silicon Si 1.11 1016 IV Germanium Ge 0.67 IlI-V Gallium(II) nitride GaN 3.4 1015 III-V Gallium(III) phosphide GaP 2.26 III-V Gallium(III) arsenide GaAs 1.43 Si 1014 IV-V Silicon nitride Si,N, 5. IV-VI Lead(II) sulfide PbS 0.37 1013 IV-VI Silicon dioxide SiO2 Copper(1) oxide 2.1 MAIM 1012 1011 1010 GaAS 109 108 107 106 0.5 1.0 1.5 2.0 2.5 3.0 1000/T(K ) Intrinsic carrier density n; (cm3)
Transcribed Image Text:a) for Ge, Si and GaAs. (Why is ni highest for Ge? Why is it lowest for GaAs?) Explain qualitatively the differences in intrinsic carrier concentrations b) Explain qualitatively why ni increases with increasing temperature. 1500 T(*C) 1019 1000 500 200 100 27 List of band gaps of semiconductor materials. 1018 Band g @ 302 Group Material Symbol 1017 IV Diamond 5.5 Ge IV Silicon Si 1.11 1016 IV Germanium Ge 0.67 IlI-V Gallium(II) nitride GaN 3.4 1015 III-V Gallium(III) phosphide GaP 2.26 III-V Gallium(III) arsenide GaAs 1.43 Si 1014 IV-V Silicon nitride Si,N, 5. IV-VI Lead(II) sulfide PbS 0.37 1013 IV-VI Silicon dioxide SiO2 Copper(1) oxide 2.1 MAIM 1012 1011 1010 GaAS 109 108 107 106 0.5 1.0 1.5 2.0 2.5 3.0 1000/T(K ) Intrinsic carrier density n; (cm3)
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