Silicon atoms with a concentration of 7× 1010 cm3 are added to galliumarsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms andthat 15% of the concentration added replaces gallium atoms to free electrons and 85% replacesarsenic to create holes. Use the following parameters for GaAs at T= 300 K:N. = 4.7 x 1017cm-3 and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constantover the temperature range.The acceptor concentration?

Given,Concentration of Silicon=7×1010 cm-3

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