The relation between the number of free electrons (n) in a semiconductor and temperature (T) is given by: nat nx T On x T3/2 O nx T1/2
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Q: The density of sodium metal at room temperature is 0.95 g/cm³. Assuming that there is one conduction…
A: Number density of sodium is, n=NV=NAρM=6.022×10230.95 g/cm323 g/mol=2.487×1022 cm-3=2.487×1028 m-3
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Q: The hole concentration in a semiconductor at T=300K can be expressed as p(x) =10" exp| 20 |cm° ,…
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A: Given, mn*=0.067m0μ=1350cm2/V.s
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- In a normal conductor heat is generated at a rate I 2R. Therefore a current-carrying conductor must dissipate heat effectively or it can melt or overheat the device in which it is used. Consider a long cylindrical copper wire (resistivity 1.72x 10-8 Ω*m) of diameter 0.75 mm. If the wire can dissipate 80 W/m2 along its surface, what is the maximum current this wire can carry?At a certain temperature, the electron and hole mobilities in intrinsic germanium are given as 0.43 and 0.21 m2/V s, respectively. If the electron and hole concentrations are both 2.3 x 10'® m, find the conductivity at this temperature.Q2/ If the resistivity of pure silicon is 2300 (0. m) and assuming that the valance electrons of silicon is 4. Let T = 300 K. (a) Calculate the electron density per cubic meter (b) Calculate the electron mobility when the electron density is doubled. Note: Avogadro's number is 8.61 x 10 mol Atomic mass of silicon is 28.08 g/mol, mass density is 2.33 g/cm
- Can a semiconductor be used to describe the distinction between a conductor and an insulator? Why not use a graph to support your arguments?Estimate the pressure of an ideal Fermi-Dirac gas of electrons at 0°KK and (ii) T=400 K. (b) Repeat part (a) for GaAs. ales in silicon between E, and 3.27 (a) Determine the total number (#/cm') of energy states in silicon between E, and E.-3 KT at (1) T = 300 K and (ii) T = 400 K. (b) Repeat part (a) for GaAs. (a) Plot the density of states in the conduction band of silicHow would I draw the following graphs for a simple ohmic device from the equations V=IR and P=IV=I^2R=V^2/R: plot V vs. I with constant R, plot P vs V with constant R, plot P vs R with constant I, and plot P vs I with constant R.Q 2: Compute transistor parameters (BJT with B= 100). currents Ib, Ic, le and voltages Vbe and Vbc 12V 4V 40k Ik wwQ2/ If the resistivity of pure silicon is 2300 (N. m) and assuming that the valance electrons of silicon is 4. Let T = 300 K. (a) Calculate the electron density per cubic meter (b) Calculate the electron mobility when the electron density is doubled. Note: Avogadro's number is 6.02 x 1023mol Atomic mass of silicon is 28.08 g/mol, mass density is 2.33 g/cmSEE MORE QUESTIONS