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If the effective mass of electron in silicon is m 0.067 mo. Find the mean time between collections for
electrons. (Assume the mobility of electron in Si is 1350 cm²/(V.s)).
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A silicon p-n junction (ni = 1010 cm3, Na = 1017 cm-3 and Nd = 4 x 1016 cm 3) is biased with an applied voltage Va = -5 V. Calculate the built-in potential, the depletion layer width and the depletion capacitance. Take the temperature as 27°C.
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The effective density of states of a piece of silicon is Nc = 2x1319 cm³ in the conduction band at room temperature. Assume the intrinsic concentration, ni, is 1010 cm3. Suppose 0.1% of the equivalent density of states in the conduction band are filled with electrons at room temperature. (a) What is the doping concentration in the silicon? (b) What is the electron concentration in the silicon? (c) What is the hole concentration in the silicon? (d) What is the value of the Fermi-Dirac function f(E) at the conduction band edge?