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1500 Electron mobility Hole mobility 1400 1300 1200 1100 1000 Mobility equations 900 1365 800 Hn= 52.2 + 0.68 NT 1+ 9.68 × 1016 700 600 426 500 Hn= 44.9 + 0.72 NT 1+ 2.23 x 1016 400 300 200 100 1013 1014 1015 1016 1017 1018 1019 1020 1021 Total impurity concentration N in atoms/cm3 Figure 2.8 Dependence of electron and hole mobility on total impurity concentration in silicon at 300 K. Mobility at 300 K in cm²/ V-s

1500 Electron mobility Hole mobility 1400 1300 1200 1100 1000 Mobility equations 900 1365 800 Hn= 52.2 + 0.68 NT 1+ 9.68 × 1016 700 600 426 500 Hn= 44.9 + 0.72 NT 1+ 2.23 x 1016 400 300 200 100 1013 1014 1015 1016 1017 1018 1019 1020 1021 Total impurity concentration N in atoms/cm3 Figure 2.8 Dependence of electron and hole mobility on total impurity concentration in silicon at 300 K. Mobility at 300 K in cm²/ V-s

College Physics
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
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What are the maximum values of the room temperature values (300 K) of the diffusion coefficients for electrons and holes in silicon based on the mobilities as shown ?

1500 Electron mobility Hole mobility 1400 1300 1200 1100 1000 Mobility equations 900 1365 800 Hn= 52.2 + 0.68 NT 1+ 9.68 × 1016 700 600 426 500 Hn= 44.9 + 0.72 NT 1+ 2.23 x 1016 400 300 200 100 1013 1014 1015 1016 1017 1018 1019 1020 1021 Total impurity concentration N in atoms/cm3 Figure 2.8 Dependence of electron and hole mobility on total impurity concentration in silicon at 300 K. Mobility at 300 K in cm²/ V-s
Transcribed Image Text:1500 Electron mobility Hole mobility 1400 1300 1200 1100 1000 Mobility equations 900 1365 800 Hn= 52.2 + 0.68 NT 1+ 9.68 × 1016 700 600 426 500 Hn= 44.9 + 0.72 NT 1+ 2.23 x 1016 400 300 200 100 1013 1014 1015 1016 1017 1018 1019 1020 1021 Total impurity concentration N in atoms/cm3 Figure 2.8 Dependence of electron and hole mobility on total impurity concentration in silicon at 300 K. Mobility at 300 K in cm²/ V-s
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