3.1 Find values of the intrinsic carrier concentration n for silicon at -55°C, 0°C, 20°C, 75°C, and 125°C. At each temperature, what fraction of the atoms is ionized? Recall that a silicon crystal has approximately 5 x 10²2 atoms/cm³.
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- constant = 1. If 1 × 1015 boron atoms per cm³ are uniformly added to silicon (diamond structure, lattice 0.543 nm) as a substitutional impurity, determine what percentage of the silicon atoms are displaced in the single crystal lattice, i.e., the concentration of boron as an impurity in silicon.Calculate the intrinsic carrier concentration in silicon at T = 250 K and at T = 400 K The values of N. and Ny for silicon at T = 300 K are 2.8 X 1019 cm-3 and 1.04 X 1019 cm3, respectively. Both N, and N, vary as T3/2. Assume the bandgap energy of silicon is 1.12 eV and does not vary over this temperature range.In solid KCI the smallest distance between the centers of a. potassium ion and a chloride ion is 314 pm. Calculate the length of the edge of the unit cell and the density of KCI, assuming it has the same structure as sodium chloride.
- 621. 14-4 Lattice specific heat of a 1D crystal of inert gas atoms. Consider a one-dimensional crystal of inert gas atoms. Let L be the length of the crystal and N the number of atoms. Let a be the lattice constant. . Evaluate the phonon density of states for this crystal. i. Derive an integral expression for the lattice specific heat of the crystal. iii. Evaluate the lattice specific heat in the high- and low- temperature limits.At a certain temperature, the electron and hole mobilities in intrinsic germanium are given as 0.43 and 0.21 m2/V s, respectively. If the electron and hole concentrations are both 2.3 x 10'® m, find the conductivity at this temperature.
- Thermal Conductivity for Aluminum is 200 for silicone 0.2Q :- Find the mobilities, and resistivities of silicon samples at 300 K, for each of the following impurity concentrations: (a) 5 x 1015 boron atoms/cm³; (b) 2 x 1016 boron atoms/cm³ and 1.5 x 1016 arsenic atoms/cm³.QA (10 KQ) resistor is made of two strips connected in parallel, each one has (40 um) thick, and (6 mm) long. One strip is of intrinsic germanium and has (0.5 mm) wide. Determine the width of other strip if it made of Ge., doped with (10²') donor atom/cm,at the working temperature. The intrinsic carrier density of Ge, is (2.5x10"m), and the electron and hole mobilities are (0.4 m/V.Sec. , and 0.2 m/V.Sec.) respectively.
- 7.7 The measured thermal conductivity of germanium at 300°K is 0.63 W/°K, in a range where acoustic phonon scattering dominates. (a) What fraction of this thermal conductivity is caused by free electrons if the free-electron density is 1017 cm-³ and the electron mobility is 4x 10 cm2/V-sec? (b) What must the concentration of free electrons in germanium at 300°K be in order for the electronic contribution to the thermal conductivity to be equal to the lattice contribution? (c) The thermoelectric power corresponding to (a) is measured to be 0.46 mV/°K. How far below the conduction-band edge does the Fermi level lie?A silicon p-n junction (ni = 1010 cm3, Na = 1017 cm-3 and Nd = 4 x 1016 cm 3) is biased with an applied voltage Va = -5 V. Calculate the built-in potential, the depletion layer width and the depletion capacitance. Take the temperature as 27°C.The effective density of states of a piece of silicon is Nc = 2x1319 cm³ in the conduction band at room temperature. Assume the intrinsic concentration, ni, is 1010 cm3. Suppose 0.1% of the equivalent density of states in the conduction band are filled with electrons at room temperature. (a) What is the doping concentration in the silicon? (b) What is the electron concentration in the silicon? (c) What is the hole concentration in the silicon? (d) What is the value of the Fermi-Dirac function f(E) at the conduction band edge?