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2.43 Silicon is doped with 1016 cm-3 boron atoms. Determine the carrier freezeout temperature range the freezeout boundary is defined as the temperature at which the ionization of the doping atoms is 90%. The doping level of boron in silicon is 0.045 eV, and the degeneracy factor is g = 1/4. Assume constant effective density of states in the valence band, Ny = 3.10 x 1019 cm-3. if %3D

2.43 Silicon is doped with 1016 cm-3 boron atoms. Determine the carrier freezeout temperature range the freezeout boundary is defined as the temperature at which the ionization of the doping atoms is 90%. The doping level of boron in silicon is 0.045 eV, and the degeneracy factor is g = 1/4. Assume constant effective density of states in the valence band, Ny = 3.10 x 1019 cm-3. if %3D

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2.43 Silicon is doped with 1016 cm-3 boron atoms. Determine the carrier freezeout temperature range if the freezeout boundary is defined as the temperature at which the ionization of the doping atoms is 90%. The doping level of boron in silicon is 0.045 eV, and the degeneracy factor is g = 1/4. Assume constant effective density of states in the valence band, Ny = 3.10 x 1019 cm-3.
Transcribed Image Text:2.43 Silicon is doped with 1016 cm-3 boron atoms. Determine the carrier freezeout temperature range if the freezeout boundary is defined as the temperature at which the ionization of the doping atoms is 90%. The doping level of boron in silicon is 0.045 eV, and the degeneracy factor is g = 1/4. Assume constant effective density of states in the valence band, Ny = 3.10 x 1019 cm-3.
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