The effective density of states of a piece of silicon is Nc = 2x 19 cm³ in the conduction band at room temperature. Assume the intrinsic concentration, ni, is 1010 cm3. Suppose 0.1% of the equivalent density of states in the conduction band are filled with electrons at room temperature. (a) What is the doping concentration in the silicon? (b) What is the electron concentration in the silicon? (c) What is the hole concentration in th silicon?
The effective density of states of a piece of silicon is Nc = 2x 19 cm³ in the conduction band at room temperature. Assume the intrinsic concentration, ni, is 1010 cm3. Suppose 0.1% of the equivalent density of states in the conduction band are filled with electrons at room temperature. (a) What is the doping concentration in the silicon? (b) What is the electron concentration in the silicon? (c) What is the hole concentration in th silicon?
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Transcribed Image Text:The effective density of states of a piece of
silicon is Nc = 2x 19 cm3 in the conduction
band at room temperature. Assume the intrinsic
concentration, ni, is 1010 cm3. Suppose 0.1% of
the equivalent density of states in the
conduction band are filled with electrons at
room temperature.
(a) What is the doping concentration in the
silicon?
(b) What is the electron concentration in the
silicon?
(c) What is the hole concentration in the
silicon?
(d) What is the value of the Fermi-Dirac
function f(E) at the conduction band edge?
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