Suppose you need to design an n-type silicon semiconductor with a conductivity of 160 (N ·m)-1 at 300K. The atomic weight of silicon is 28.09 g/mol, and the density is 2.33g/cm³. The mobility of electrons/holes in silicon at different doping concentrations under different temperature is shown in the following figure. 0.1 102 102 10, 10 0.01 0.01 A kgou ao

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Suppose you need to design an n-type silicon semiconductor with a conductivity of 160 (N ·m)-1
at 300K. The atomic weight of silicon is 28.09 g/mol, and the density is 2.33g/cm³. The mobility of
electrons/holes in silicon at different doping concentrations under different temperature is shown
in the following figure.
0.1
102
102
10,
10
0.01
0.01
A kgou ao
Transcribed Image Text:Suppose you need to design an n-type silicon semiconductor with a conductivity of 160 (N ·m)-1 at 300K. The atomic weight of silicon is 28.09 g/mol, and the density is 2.33g/cm³. The mobility of electrons/holes in silicon at different doping concentrations under different temperature is shown in the following figure. 0.1 102 102 10, 10 0.01 0.01 A kgou ao
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