An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 5 X -3 -3 1017 cm-³ and N₂ = 1 X 10¹7 cm-³ at T = Na 300K. Determine the peak electric field for this junction for a reverse voltage of 5 V.
An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 5 X -3 -3 1017 cm-³ and N₂ = 1 X 10¹7 cm-³ at T = Na 300K. Determine the peak electric field for this junction for a reverse voltage of 5 V.
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
Transcribed Image Text:An abrupt silicon pn junction at zero bias
has dopant concentrations of Nd = 5 X
1017 cm 3 and N₂ = 1 X 1017 cm-3 at T =
a
300K. Determine the peak electric field
for this junction for a reverse voltage of 5
V.
Emax
=
O Emax
O Emax
3.88 X 105 V/cm
Emax
3.21 X 105 V/cm
Emax = 1.70 X 105 V/cm
1.35 X 105 V/cm
=
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