e) Intrinsic silicon has effective densities of states in the conduction band and the valence band of 3.2 × 10¹⁹ cm¯³ and 1.8 × 10¹⁹ cm−³, respectively. If the band gap is 1.12 eV, what is the concentration of intrinsic charge carriers in silicon at 300 K? A. 9.46 x 10⁹ m-³ B. 9.46 x 10⁹ cm-³ C. 0 m-3 D. 2.40 × 10¹9 cm-³
e) Intrinsic silicon has effective densities of states in the conduction band and the valence band of 3.2 × 10¹⁹ cm¯³ and 1.8 × 10¹⁹ cm−³, respectively. If the band gap is 1.12 eV, what is the concentration of intrinsic charge carriers in silicon at 300 K? A. 9.46 x 10⁹ m-³ B. 9.46 x 10⁹ cm-³ C. 0 m-3 D. 2.40 × 10¹9 cm-³
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Transcribed Image Text:(e) Intrinsic silicon has effective densities of states in the conduction band and the
valence band of 3.2 × 10¹⁹ cm−³ and 1.8 × 10¹⁹ cm-³, respectively. If the band gap
is 1.12 eV, what is the concentration of intrinsic charge carriers in silicon at 300 K?
A.
9.46 x 10⁹ m-³
9.46 x 10⁹ cm-³
0 m-3
2.40 x 1019 cm-3
B.
C.
D.
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