4. A silicon sample has, at 300 K, o = 10-6 S/cm, N, = Nc %3D %3D =D 1 × 1019 cm¯³, H= %3D 1000 cm2/s, and u, = 600 cm2/s. Find the energy gap of the material at 300 K and the conductivity at 500 K. Assume that Ny, Ne, H, and µ, are independent of Mp C' temperature.
4. A silicon sample has, at 300 K, o = 10-6 S/cm, N, = Nc %3D %3D =D 1 × 1019 cm¯³, H= %3D 1000 cm2/s, and u, = 600 cm2/s. Find the energy gap of the material at 300 K and the conductivity at 500 K. Assume that Ny, Ne, H, and µ, are independent of Mp C' temperature.
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
Transcribed Image Text:4. A silicon sample has, at 300 K, o = 10-6 S/cm, Ny =
Nc
%3D
= 1 x 1019 cm-3,
%3D
1000 cm2/s, and u, = 600 cm2/s. Find the energy gap
of the material at 300 K and the conductivity at 500
%3D
K. Assume that Ny, N, H, and u, are independent of
V'
temperature.
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