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1. A silicon pn junction at T = 300 K has doping concentrations of Na = 5 x 1015 cm-3 and Nd = 5 x 1016 cm 3. n₁ = 1.5 x 1010 cm³. = 11.7. A reverse-biased voltage of VR = 4 V is applied. Determine (a) Built-in potential Vbi (b) Depletion width Wdep (c) Xn and Xp (d) The maximum electric field Emax N-type Na 0 P-type Na

1. A silicon pn junction at T = 300 K has doping concentrations of Na = 5 x 1015 cm-3 and Nd = 5 x 1016 cm 3. n₁ = 1.5 x 1010 cm³. = 11.7. A reverse-biased voltage of VR = 4 V is applied. Determine (a) Built-in potential Vbi (b) Depletion width Wdep (c) Xn and Xp (d) The maximum electric field Emax N-type Na 0 P-type Na

College Physics
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
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1. A silicon pn junction at T = 300 K has doping concentrations of Na = 5 x 10¹5 cm-³ and Na = 5 x 10¹6 cm ³. n₁ = 1.5 x 10¹0 cm ³. &, = 11.7. A reverse-biased voltage of VR = 4 V is applied. Determine (a) Built-in potential Vbi (b) Depletion width Wdep (c) Xn and Xp (d) The maximum electric field Emax N-type Na 0 P-type Na
Transcribed Image Text:1. A silicon pn junction at T = 300 K has doping concentrations of Na = 5 x 10¹5 cm-³ and Na = 5 x 10¹6 cm ³. n₁ = 1.5 x 10¹0 cm ³. &, = 11.7. A reverse-biased voltage of VR = 4 V is applied. Determine (a) Built-in potential Vbi (b) Depletion width Wdep (c) Xn and Xp (d) The maximum electric field Emax N-type Na 0 P-type Na
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