At T=300K, the electron concentration of a semiconductor material isn, = 10" cm. The bandgap energy Eg=1.1eV, Nc = 2.8×10" cm³ , and N, =1.0×10" cm³. (1) Determine the hole concentration P.. Is this n-type or p-type semiconductor? (2) Determine EF – E; (3) What is the dopant concentration, N, or N.? (Please evaluate N. or N.)
At T=300K, the electron concentration of a semiconductor material isn, = 10" cm. The bandgap energy Eg=1.1eV, Nc = 2.8×10" cm³ , and N, =1.0×10" cm³. (1) Determine the hole concentration P.. Is this n-type or p-type semiconductor? (2) Determine EF – E; (3) What is the dopant concentration, N, or N.? (Please evaluate N. or N.)
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Transcribed Image Text:At T=300K, the electron concentration of a semiconductor material
is n, = 10" cm*. The bandgap energy E=1.leV, Nc =2.8×10" cm, and
N, =1.0x10" cm³.
(1) Determine the hole concentration P. . Is this n-type or p-type
semiconductor?
(2) Determine E F – EF ;
(3) What is the dopant concentration, N, or .? (Please evaluate N, or N.)
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