1.0 Biased PN Junctions Consider two PN diodes, A and B as depicted below. Suppose the junction area for each diode is 1.0 x10-8 cm² (1 square-micron) P-doped N, = 1016 1/cm N-doped Ng = 1017 1/cm³ %3D + V. Х ро Xno B P-doped N-doped Na = 1018 1/cm³ Ng = 1017 1/cm3 %3D Х ро Xno Vo a) At VD =0 Volts, which diode has the wider total depletion region width (value (in microns) and what is it? b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in the depletion region is the largest and what is its value (in V/cm)?

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1.0 Biased PN Junctions
Consider two PN diodes, A and B as depicted below. Suppose the junction area for
each diode is 1.0 x10-8 cm² (1 square-micron)
P-doped
N-doped
N = 1016 1/ cm3
Ng = 1017 1/cm³
X,
*po
Vo
в
P-doped
Na = 1018 1/cm3
N-doped
Ng = 1017 1/cm3
Х ро
Xno
V.
a) At VD =0 Volts, which diode has the wider total depletion region width (value
(in microns) and what is it?
b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in
the depletion region is the largest and what is its value (in V/cm)?
c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a
smaller magnitude of the negative bias).
Transcribed Image Text:1.0 Biased PN Junctions Consider two PN diodes, A and B as depicted below. Suppose the junction area for each diode is 1.0 x10-8 cm² (1 square-micron) P-doped N-doped N = 1016 1/ cm3 Ng = 1017 1/cm³ X, *po Vo в P-doped Na = 1018 1/cm3 N-doped Ng = 1017 1/cm3 Х ро Xno V. a) At VD =0 Volts, which diode has the wider total depletion region width (value (in microns) and what is it? b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in the depletion region is the largest and what is its value (in V/cm)? c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a smaller magnitude of the negative bias).
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