3) For a Ge (not Si) p-n junction with Na = 10ªcm~³ and Na = 1017cm¯³, the peak electric field in the junction at breakdown is 2 × 10$ V/cm. a) Determine the depletion zone width for this peak electric field. b) Calculate the reverse bias breakdown voltage of the diode. Hint: the built-in potential is needed to obtain an accurate result. c) What can be done to which doping level to approximately double the breakdown voltage? Explain.
3) For a Ge (not Si) p-n junction with Na = 10ªcm~³ and Na = 1017cm¯³, the peak electric field in the junction at breakdown is 2 × 10$ V/cm. a) Determine the depletion zone width for this peak electric field. b) Calculate the reverse bias breakdown voltage of the diode. Hint: the built-in potential is needed to obtain an accurate result. c) What can be done to which doping level to approximately double the breakdown voltage? Explain.
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Transcribed Image Text:3) For a Ge (not Si) p-n junction with Na = 1016cm-3 and Na = 1017cm-3, the peak electric field
in the junction at breakdown is 2 × 105 V/cm. a) Determine the depletion zone width for this peak
electric field. b) Calculate the reverse bias breakdown voltage of the diode. Hint: the built-in potential
is needed to obtain an accurate result. c) What can be done to which doping level to approximately
double the breakdown voltage? Explain.
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