1) A Si p-n-p transistor has the following properties at room temperature: Tn = Tp = 0.1 us NE 1019 ст 3 Emitter concentration Dn = 10 cm2/s NB 1016 ст -3 || Base concentration d, Nc = 1019 cm Collector concentration %3D WE 3 µm = Emitter width 1.5 ит %— base-collector junction W = Metallurgical base width, i.e. the distance between base-emitter junction and A = 10-5 cm2 = Cross-sectional area %3D If VCB = 0 V and VEB = 0.6 V, calculate the following: a) Neutral base width (WB) b) Base transport factor c) Emitter injection efficiency d) a, ß and y. e) Ic, Ig and Ig.
1) A Si p-n-p transistor has the following properties at room temperature: Tn = Tp = 0.1 us NE 1019 ст 3 Emitter concentration Dn = 10 cm2/s NB 1016 ст -3 || Base concentration d, Nc = 1019 cm Collector concentration %3D WE 3 µm = Emitter width 1.5 ит %— base-collector junction W = Metallurgical base width, i.e. the distance between base-emitter junction and A = 10-5 cm2 = Cross-sectional area %3D If VCB = 0 V and VEB = 0.6 V, calculate the following: a) Neutral base width (WB) b) Base transport factor c) Emitter injection efficiency d) a, ß and y. e) Ic, Ig and Ig.
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Transcribed Image Text:1) A Si p-n-p transistor has the following properties at room temperature:
Tn = Tp
0.1 us
NE
1019 сті
Emitter concentration
— 10 ст2/s
-3
Dn = Dp
NB 3D 1016 ст
Base concentration
Nc
1019 ст
-3
= Collector concentration
WE
3 µm
Emitter width
W
1.5 um
Metallurgical base width, i.e. the distance between base-emitter junction and
base-collector junction
A = 10-5 cm² = Cross-sectional area
If VCB = 0 V and VEB = 0.6 V, calculate the following:
ЕВ
a) Neutral base width (WB)
b) Base transport factor
c) Emitter injection efficiency
d)
a, ß and y.
e) Ic, Ig and Ig.
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