Answered: a) Which of these transistor… | bartleby

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a)
Which of these transistor structures, n-channel JFET, E-MOSFET and D-
MOSFET can be operated in enhancement model and why is that possible?

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Consider a silicon pn junction at T = 300 K Assume the doping concentration in then region is 102cm and the doping concentration in the pregion is 1ore and assume that a forward bias of 0.30 V is applied to the pn junction. Nate/ n = 5 ×10 Calculate the minority carrier concentration at the edge of the space charge regions.
2. For a silicon one sided abrupt p/n junction has NA = 1x10¹⁹ cm³ and NB =No=3x10¹5 cm³. Critical field at breakdown is 3 x 105 V/cm. Maximum depletion width (Wm) is defined as the depletion width at avalanche breakdown. Ignore Vbi. (a) Calculate avalanche breakdown voltage and Wm. (b) Calculate the breakdown voltage called punch through voltage if device width (W) is reduced to 3.3 μm. (c) Find the stored minority carriers per unit area in the neutral n-region for a forward bias of 0.5V. Diffusion length of holes is 1 μm.