- Using the equation below, which I gave you in class to calculate the donor level (i.e. the binding energy of a n-type impurity in semiconductor), E₂- E = m 8E2h2 calculate the donor binding energy for a semiconductor with dielectric constant = 16 and electron effective mass = 0.8 mo. Take = && where & is the permittivity of free space and & is the dielectric constant of the material.
- Using the equation below, which I gave you in class to calculate the donor level (i.e. the binding energy of a n-type impurity in semiconductor), E₂- E = m 8E2h2 calculate the donor binding energy for a semiconductor with dielectric constant = 16 and electron effective mass = 0.8 mo. Take = && where & is the permittivity of free space and & is the dielectric constant of the material.
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Transcribed Image Text:- Using the equation below, which I gave you in class to calculate the donor
level (i.e. the binding energy of a n-type impurity in semiconductor),
E₂- E =
m
8E2h2
calculate the donor binding energy for a semiconductor with dielectric
constant = 16 and electron effective mass =
0.8 mo. Take = &&
where & is the permittivity of free space and & is the dielectric constant of
the material.
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